Formation of Polycrystalline SiC in ECR Plasma
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概要
- 論文の詳細を見る
Crystalline films of SiC were formed using CVD method in electron cyclotron resonance plasma, generated by microwave (2.45 GHz) discharge in mixed gas of silane, methane, and hydrogen under the magnetic field. Depositionrate was 〜4 A/s and film composition C/Si=1.1. The largest grain size is at least 800 A which is estimated from X-ray diffraction measurements.
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Imura T
Mitsubishi Paper Mills Ltd.
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Imura T
Department Of Electrical Engineering Hiroshima University
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Imura Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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MASUDA Atsuhiko
Department of Electrical Engineering, Hiroshima University
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Masuda Atsuhiko
Department Of Electrical Engineering Hiroshima University
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