Model of reactive microwave plasma discharge for growth of single-crystal diamond (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)
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概要
著者
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CHAYAHARA Akiyoshi
AIST Kansai
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
関連論文
- Model of reactive microwave plasma discharge for growth of single-crystal diamond (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Focused High-Energy Heavy Ion Beams
- Surface Structure of Ion-Implanted Silica Glass
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
- Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films
- Ion-Beam 3C-SiC Heteroepitaxy on Si
- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
- Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
- Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
- Chemical State and Refractive Index of Mg-Ion-Implanted Silica Glass
- Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Role of Hydrogen in Improvement of the Critical Temperature of Ceramic YBa_2Cu_3O_ by Proton Implantation
- Fabrication of 1 Inch Mosaic Crystal Diamond Wafers
- Dense Structure of SiN_x Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
- Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
- Metallic Alloy Coatings Using Coaxial Vacuum Arc Deposition
- Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
- Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
- Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope
- Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide
- Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide
- Formation of Polycrystalline SiC in ECR Plasma
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
- Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
- Dense Structure of SiNx Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane