New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
GaNyAs1-x-yBix epilayers were grown on GaAs by molecular beam epitaxy for the first time. Multilayered samples consisting of GaAs1-xBix, GaNyAs1-y and GaNyAs1-x-yBix showed distinct X-ray diffraction (XRD) peaks ascribed to each layer. The GaBi molar fraction, $x$, estimated by the combination of Rutherford backscattering spectroscopy and XRD was controlled in a range up to 4.0%. The GaN molar fraction estimated from the angular spacing of the XRD peak between GaAs1-xBix and GaNyAs1-x-yBix increased up to 8.0% with increasing supply of activated nitrogen generated in rf plasma.
- 2004-07-01
著者
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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TAKEHARA Yuji
Department of Electronics and Information Science, Kyoto Institute of Technology
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CHAYAHARA Akiyoshi
AIST Kansai
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HORINO Yuji
AIST Kansai
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Huang Wei
Department Of Biochemistry And Molecular Biology Beijing Normal University Beijing Key Laboratory
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Yoshimoto Masahiro
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Huang Wei
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Takehara Yuji
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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HUANG Wei
Department of Aeronautics and Astronautics, National Cheng Kung University
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