Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements
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概要
- 論文の詳細を見る
We have investigated the electronic band structure of a long-range-ordered Ga0.5In0.5P/GaAs heterointerface by optical measurements and a semi-empirical calculation. Raman-scattering spectra of the ordered Ga0.5In0.5P/GaAs samples show plasmon–phonon coupled modes induced by dense electron accumulation at the heterointerface, in contrast to that of the unordered sample which shows the spectrum of bulk GaAs. Furthermore, the Franz–Keldysh oscillation observed in the photoluminescence-excitation spectrum indicates a strong interface electric field. According to the results of a comparison between the experiment and a semi-empirical calculation based on Poisson's law, it is found that the spatial distribution of the accumulated electron density is modified strongly by the conduction-band discontinuity and the interface field, depending on the order parameter.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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Wada Osamu
Department Of Applied Quantum Physics Kyushu University
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Schweizer Heinz
Physikalisches Institut Universitat Stuttgart
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Yamashita Kenichi
Department Of Applied Chemistry School Of Engineering Kyushu University
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Wang Yong
Department Of Agricultural Biotechnology College Of Agriculture And Life Sciences Seoul National Uni
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Kita Takashi
Department Of Anesthesiology Osaka Police Hospital
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Wang Yong
Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan
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Geng Christian
Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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Scholz Ferdinand
Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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Scholz Ferdinand
Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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Oe Kunishige
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki Goshokaidocho, Sakyo-ku, Kyoto 606-8585, Japan
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Geng Christian
Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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Kita Takashi
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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Yamashita Kenichi
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki Goshokaidocho, Sakyo-ku, Kyoto 606-8585, Japan
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Wada Osamu
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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Schweizer Heinz
Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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