High Frequency Operation of Nanoelectronic Y-Branch at Room Temperature : Semiconductors
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概要
- 論文の詳細を見る
Nanoelectronic Y-branches have been fabricated using electron beam lithography and wet etching on modulation doped GaAS/AlGaAs heterostructures. The output voltage of the devices measured at the stem shows clear rectification characteristics as the input voltage of one branch is varied. The high frequency properties of rectification are investigated at room temperature. The second harmonic of a microwave injected into the right branch is observed at the stem up to 20GHz.
- 社団法人応用物理学会の論文
- 2001-08-15
著者
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FORCHEL Alfred
Technische Physik, Universitat Wurzburg, Wilhelm-Conrad-Rontgen-Research Center for Complex Material
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Forchel Alfred
Technische Physik Universitat Wurzburg Am Hubland
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Forchel Alfred
Technische Physik Universitat Wurzburg
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Schweizer Heinz
Physikalisches Institut Universitat Stuttgart
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Fischer Frank
Technische Physik Universitat Wurzburg Am Hubland
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WORSCHECH Lukas
Technische Physik, Universitat Wurzburg, Am Hubland
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KAMP Martin
Technische Physik, Universitat Wurzburg, Am Hubland
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Kamp Martin
Technische Physik Universitat Wurzburg Am Hubland
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Worschech Lukas
Technische Physik Universitat Wurzburg Am Hubland
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SCHWEIZER Heinz
Physikalisches Institut, Universitat Stuttgart
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