Investigation of Random and Channeling Ar^+ Implantation-Induced Damage in Al(In)GaAs/GaAs Quantum Wells

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-12-30

著者

• FORCHEL Alfred

  Technische Physik, Universitat Wurzburg, Wilhelm-Conrad-Rontgen-Research Center for Complex Material

• Forchel Alfred

  Technische Physik Universitat Wurzburg

• Forchel Alfred

  Technische Physik University Of Wurzburg Am Hubland

• Kieslich Albrecht

  Technische Physik University Of Wurzburg Am Hubland

• STRAKA Josef

  Technische Physik, University of Wurzburg, Am Hubland

• Straka Josef

  Technische Physik University Of Wurzburg Am Hubland

関連論文

• Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55μm
• Optical Study of Intermixing in CdTe/CdMgTe Quantum Wells
• High Performance 1.3 μm Quantum-Dot Lasers
• Investigation of Random and Channeling Ar^+ Implantation-Induced Damage in Al(In)GaAs/GaAs Quantum Wells
• High Frequency Operation of Nanoelectronic Y-Branch at Room Temperature : Semiconductors
• Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells
• Many-Body Effects in the Magnetoplasma of In_Ga_As/GaAs Quantum Wires
• Implantation Induced Order-Disorder Transition in Ga_In_P/(Al_Ga_)_In_P Heterostructures
• 1.3 μm GaInAsN Laserdiodes with improved High Temperature Performance
• Temperature Dependence of Highly Excited Exciton Polaritons in Semiconductor Microcavities
• Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator Substrate

もっと見る 閉じる

スポンサーリンク