Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator Substrate

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概要

• 論文の詳細を見る

• Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to $T=100$ K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-03-30

著者

• Forchel Alfred

  Technische Physik Universitat Wurzburg

• Kamp Martin

  Technische Physik Universitat Wurzburg Am Hubland

• Savin Alexander

  Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland

• Forchel Alfred

  Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

• Manninen Antti

  Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland

• Kamp Martin

  Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

• Ahopelto Jouni

  VTT Microelectronics Centre, P.O. Box 1101, FIN-02044 VTT, Finland

• Ahopelto Jouni

  VTT Micro and Nanoelectronics, Espoo, FI-02044, Finland

• Pekola Jukka

  Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland

• Kauranen Jari

  Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland

• Emmerling Monika

  Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

• Prunnila Mika

  VTT Microelectronics Centre, P.O. Box 1101, FIN-02044 VTT, Finland

• Kauranen Jari

  Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland

• Emmerling Monika

  Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

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