Ahopelto Jouni | VTT Micro and Nanoelectronics, Espoo, FI-02044, Finland
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概要
関連著者
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Ahopelto Jouni
VTT Micro and Nanoelectronics, Espoo, FI-02044, Finland
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Makela Tapio
VTT Micro and Nanoelectronics, P.O. Box 1000, FIN-02044 VTT Espoo, Finland
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Haatainen Tomi
VTT Micro and Nanoelectronics, P.O. Box 1000, FIN-02044 VTT Espoo, Finland
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Majander Paivi
VTT Micro and Nanoelectronics, P.O. Box 1000, FIN-02044 VTT Espoo, Finland
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Forchel Alfred
Technische Physik Universitat Wurzburg
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KAWAGUCHI Yasuhide
Asahi Glass Co., Ltd.
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Kamp Martin
Technische Physik Universitat Wurzburg Am Hubland
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Savin Alexander
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland
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Forchel Alfred
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
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Manninen Antti
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland
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Kamp Martin
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
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Ahopelto Jouni
VTT Micro and Nanoelectronics, P.O. Box 1000, FIN-02044 VTT Espoo, Finland
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Ahopelto Jouni
VTT Microelectronics Centre, P.O. Box 1101, FIN-02044 VTT, Finland
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Lambertini Vito
Micro and Nano Technologies, Centro Ricerche Fiat, Torino 50, 10043, Italy
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Haatainen Tomi
VTT Micro and Nanoelectronics, Espoo, FI-02044, Finland
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Pekola Jukka
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland
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Kauranen Jari
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland
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Emmerling Monika
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
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Prunnila Mika
VTT Microelectronics Centre, P.O. Box 1101, FIN-02044 VTT, Finland
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Kauranen Jari
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland
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Emmerling Monika
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
著作論文
- Continuous Double-Sided Roll-to-Roll Imprinting of Polymer Film
- Imprinted 50 nm Features Fabricated by Step and Stamp UV Imprinting
- Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator Substrate