Imprinted 50 nm Features Fabricated by Step and Stamp UV Imprinting
スポンサーリンク
概要
- 論文の詳細を見る
We fabricated features down to 50 nm by UV step and stamp imprint lithography (UV-SSIL). This method enables fast sequential imprinting for large areas operating at room temperature with a low-viscosity material. This allows the patterning of both large micron-scale and submicron-scale structures simultaneously. A low-viscosity polymer allows pattern transfer at moderate pressures, thereby reducing mechanical stress on the stamp and substrate. Processing at room temperature helps to maintain the alignment and to prevent the distortion of the features caused by the thermal expansion of the mold and substrate. A UV-SSIL experiment with a novel photosensitive polymer was performed using a prototype of currently commercially available machines used for both thermal and UV step and stamp imprintings. As a master, we used a transparent quartz stamp (with features down to 50 nm) patterned by electron-beam lithography. The polymer was dispensed on a 100 mm silicon substrate using a syringe-type dispensing system. The results were analyzed by atomic force microscopy and a scanning electron microscopy. The fabricated structures exhibited good lateral and vertical feature replication fidelities.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-06-25
著者
-
KAWAGUCHI Yasuhide
Asahi Glass Co., Ltd.
-
Ahopelto Jouni
VTT Micro and Nanoelectronics, Espoo, FI-02044, Finland
-
Makela Tapio
VTT Micro and Nanoelectronics, P.O. Box 1000, FIN-02044 VTT Espoo, Finland
-
Haatainen Tomi
VTT Micro and Nanoelectronics, P.O. Box 1000, FIN-02044 VTT Espoo, Finland
-
Majander Paivi
VTT Micro and Nanoelectronics, P.O. Box 1000, FIN-02044 VTT Espoo, Finland
関連論文
- 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
- Continuous Double-Sided Roll-to-Roll Imprinting of Polymer Film
- Imprinted 50 nm Features Fabricated by Step and Stamp UV Imprinting
- Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator Substrate