157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
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概要
- 論文の詳細を見る
- 2003-06-30
著者
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ISHIKAWA Seiichi
Semiconductor Leading Edge Technolgies, Inc.
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ITANI Toshiro
Semiconductor Leading Edge Technolgies, Inc.
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Itani T
Selete Tsukuba Jpn
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Irie S
Semiconductor Leading Edge Technologies Ibaraki Jpn
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Irie Shigeo
Semiconductor Leading Edge Technologies Inc. (selete)
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Takebe Yoko
Asahi Glass Co. Ltd.
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Okada Shinji
Asahi Glass Co. Ltd.
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FURUKAWA Takamitsu
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Itani T
Semiconductor Leading Edge Technologies Inc. (selete)
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Ishikawa Seiichi
Semiconductor Leading Edge Technolgies Inc.
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HAGIWARA Takuya
Semiconductor Leading Edge Technologies, Inc. (Selete)
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YAMAZAKI Tamio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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KAWAGUCHI Yasuhide
Asahi Glass Co., Ltd.
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KODAMA Syun-ichi
Asahi Glass Co., Ltd.
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YOKOKOJI Osamu
Asahi Glass Co., Ltd.
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KANEKO Isamu
Asahi Glass Co., Ltd.
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Kaneko Isamu
Asahi Glass Co. Ltd.
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Yamazaki T
Semiconductor Leading Edge Technologies Inc. (selete)
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Yamazaki Tamio
Semiconductor Leading Edge Technologies Inc.
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Yokokoji O
Asahi Glass Co. Ltd.
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Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
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Hagiwara Takuya
Semiconductor Leading Edge Technologies Inc. (selete)
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Furukawa Takamitsu
Semiconductor Leading Edge Technologies Inc. (selete)
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Kawaguchi Y
Asahi Glass Co. Ltd.
関連論文
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- Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
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- Development of Resist Materials for EUVL
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- Dissolution Characteristics of Chemically Amplified DUV Resists
- Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists
- A Study of Photoacid Structure Dependence on Lithographic Performance in Chemically Amplified Resists
- Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
- 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
- Fabrication of 65-nm Holes for 157-nm Lithography
- Deblocking Reaction of Chemically Amplified Positive DUV Resists
- Characterization of Fluoropolymer Resist for 157-nm Lithography
- Progress in Top Surface Imaging Process
- Process Characterization of Bi-layer Silylation Process for l93-nm Lithography
- Dissolution Kinetics Analysis for Chemically Amplified Deep Ultraviolet Resist
- Application of a New BARC Material for 157-nm Lithography
- A study of an Organic Bottom Antireflective Coating for 157-nm Lithography
- Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
- Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
- Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Fabrication of 65-nm Holes for 157-nm Lithography
- Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Development of 157 nm Resist Using Highly Exact Theoretical Calculation of Absorption Spectra
- Multicomponent negative-type photoresist based on Noria analog with 12 ethoxy groups
- A Nonaqueous Potentiometric Titration Study of the Dissociation of t - Butyl Methacrylate - Methacrylic Acid Copolymers
- 157-nm Resist Material Design for Improvement of Its Transparency Using Highly Precise Theoretical Calculation
- Evaluation of High-Transmittance Attenuated Phase Shifting Mask for 157 nm Lithography
- In situ Characterization of Photoresist Dissolution
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
- Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
- Reaction Mechanism of Extreme Ultraviolet Resists
- Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
- In-situ Contamination Thickness Measurement by Novel Resist Evaluation System at NewSUBARU
- Extreme Ultraviolet Resist Fabricated Using Water Wheel-Like Cyclic Oligomer with Pendant Adamantyl Ester Groups
- Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
- Imprinted 50 nm Features Fabricated by Step and Stamp UV Imprinting
- A Study of Molecular Orientation Effect in Photoresist Films
- Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
- Diffusion Control Using Matrix Change during Chemical Reaction for Inducing Anisotropic Diffusion in Chemically Amplified Resists