Fabrication of 65-nm Holes for 157-nm Lithography

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-30

著者

• ITANI Toshiro

  Semiconductor Leading Edge Technolgies, Inc.

• Watanabe K

  Semiconductor Leading Edge Technologies Inc. (selete)

• KAWAGUCHI Etsuro

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• WATANABE Kunio

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• KUROSE Eiji

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• FURUKAWA Takamitsu

  Semiconductor Leading Edge Technologies, Inc. (Selete)

関連論文

• Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
• The Emergence of Alternative Developers for Extreme Ultraviolet Lithography
• Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
• Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
• 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
• Fabrication of 65-nm Holes for 157-nm Lithography
• Progress in Top Surface Imaging Process
• Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
• Intrinsic Problem Affecting Contact Hole Resolution in Hyper NA Era
• Fabrication of 65-nm Holes for 157-nm Lithography
• Development of 157 nm Resist Using Highly Exact Theoretical Calculation of Absorption Spectra

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