Intrinsic Problem Affecting Contact Hole Resolution in Hyper NA Era

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We studied the effects of polarization control that is expected to minimize image degradation caused by the polarization effect for various patterns. The resolution of line-and-space (L&S) patterns was most enhanced by dipole illumination under polarization control. However, the polarization control did not improve resolution in dense contacts, although this was improved by normal quadrupole illumination. Consequently, it will be difficult to achieve the same resolution in dense contacts as in L&S patterns, even when advanced illumination and polarization control are applied. The resolution gap between L&S and dense contacts may reach up to a 40 nm pitch in the 45 nm node, particularly for immersion lithography using a hyper numerical aperture. We also found that 157 nm dry/immersion lithography has an advantage over 193 nm immersion lithography from the viewpoint of resolution gaps, on the basis of the assumption that both technologies would achieve the same resolution in L&S patterns.
2005-07-15