Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-30
著者
-
白井 正充
大阪府立大学大学院工学研究科
-
SHIRAI Masamitsu
Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University
-
ITANI Toshiro
Semiconductor Leading Edge Technolgies, Inc.
-
SHINOZUKA Toyofumi
Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University
-
TSUNOOKA Masahiro
Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University
-
Itani Toshiro
Semiconductor Leading Edge Technologies Inc
-
Tsunooka M
Osaka Prefecture Univ. Osaka Jpn
関連論文
- フォトポリマーの研究 : 継続は力なり
- 大阪府立大学中百舌鳥キャンパス
- Low-E_a Chemical Amplification Resists for 193nm Lithography
- Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- Advanced Surface Modification Resist Process for ArF Lithography
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- エポキシ含有フルオレン : ポリシランブレンド系の光架橋
- スルホン酸エステル含有エポキシ架橋剤を用いた再可溶化型架橋系
- 新規スルホン酸エステル基を含有するエポキシポリマーの光架橋と水への再溶解
- The Emergence of Alternative Developers for Extreme Ultraviolet Lithography
- Properties and Lithographic Capability of Sulfonium Salts with Aromatic Cyclic Ketone Group for ArF Chemically Amplified Resist
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- リワーク能を有する光架橋・硬化樹脂
- 熱分解型多官能架橋剤を用いたリワーク型光架橋系
- リワーク機能を有する光架橋・硬化樹脂
- 溶かす フォトレジスト--性能を決める溶解特性
- Photocrosslinking of Oligomers Bearing Glycidyl Sulfonate Ester Units and Their Redissolution Property
- 水による溶解除去が可能なオキセタン部位含有光架橋性高分子 (特集:光とネットワークポリマー)
- 光重合
- Photocrosslinking and Thermal Degradation of Epoxy-containing Polymers Using Photobase Generators
- 超微細加工用フォトレジスト材料
- Effect of Anions on Photoreacitivity and Stability of Quaternary Ammonium Salts as Photobase Generators
- 光酸・塩基発生剤の開発とその新規フォトポリマー設計における活用
- 再溶解型光架橋・硬化樹脂
- Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
- Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo-Induced Radical Polymerization Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo- and Thermochemical Behavior of Quaternary Ammonium Thiocyanates and Their Use as Crosslinkers
- Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
- Phase-Transfer Photopolymerization of Methyl Methacrylate with N-Cetylpyridinium Chloride-KSCN-CCl4 in an Aqueous-Organic Two-Phase System
- Phase-Transfer Photopolymerization of Methyl Methacrylate with Tetrabutylammonium Chloride-KSCN-CCI_4 in an Aqueous-Organic Two-Phase System
- Photopolymerization of Methyl Methacrylate with N-Cetylpyridinium Chloride-KSCN-CCI_4 in Aqueous System
- 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
- 熱分解型ジエポキシ化合物を用いた再可溶化型架橋性高分子
- Fabrication of 65-nm Holes for 157-nm Lithography
- Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists
- Progress in Top Surface Imaging Process
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
- Surface Modification Resists Using Photoacid and Photobase Generating Polymers
- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
- Positive Surface Modification Resist System
- Cyclic O-Acyloximes as Novel Photolatent Bases
- Enhanced photochemical generation of amines from trifunctional O-acyloxime
- Photocrosslinking System Using Highly-Functionalized Epoxy Crosslinkers Having Degradable Property
- Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
- 亜臨界水を用いた架橋樹脂の分解とケミカルリサイクル (特集 ポリマーの分解とその応用技術)
- FRPの分解とリサイクル (特集:廃棄物の再資源化技術)
- Development of 157 nm Resist Using Highly Exact Theoretical Calculation of Absorption Spectra
- Negative EUV resist based on thiol-ene system
- Non-chemically amplified EUV resist based on PHS
- メタクリル酸メチル-アクリル酸エステル共重合体の185nm光によるアブレーティブ分解
- Preparation of replicated resin mold for UV nanoimprint using reworkable dimethacrylate
- Analysis of chain propagation in UV curing using reworkable resin
- i-Line sensitive photoacid generators using thianthrenium derivatives
- I-line sensitive non-ionic photoacid generators having thianthrene skeleton
- Degradable Network Polymers Based on Di(meth)acrylates
- Photo-Initiated Amine-Formation in a Polymer Matrix and Its Application to Thermal Cross-Linking of Poly(Glycidyl Methacrylate) Films
- Photocrosslinkable Polymers with Redissolution Property
- 2-333 地域の中小企業技術者に対する工学教育プログラム((18)産学連携教育-II,口頭発表論文)
- UV/EB硬化技術--高分子材料への活用 (小特集 UV/EB硬化技術の最新の展開)
- リワーク型低収縮ジメタクリラートとそのUVインプリント材料への応用 : 樹脂構造の影響 (特集 光とネットワークポリマー)
- Synthesis and Properties of Novel i- and g-Line Sensitive Photoacid Generators Based on 9-Fluorenone Derivatives with Aryl-Ethynyl Units
- Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
- 熱分解型多官能架橋剤を用いたりワーク型光架橋系
- 水による溶解除去が可能なオキセタン部位含有光架橋性高分子