New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)

概要

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New critical-dimension controlling technique of off-axis illumination for aperiodic patterns has been developed. By means of arranging not-imaging additional pattern near 0.25 micron isolated patterns, the depth of focus of an isolated pattern was improved as well as the periodic patterns. Simulation and experimental results were verified on a 0.48 numerical-aperture, KrF excimer laser stepper. Using new deep-ultra-violet hardening technique for chemically amplified positive resist, the critical dimension loss of resist pattern was prevented. 0.25 micron design rule pattern was obtained with excellent mask linearity without critical-dimension-loss. The combination techniques are achieved quarter micron design rule complex circuit pattern layouts.
社団法人電子情報通信学会の論文
1994-03-25