"Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-30
著者
-
Matsuo Taku
The Department Of Computer Science And Electronics Kyushu Institute Of Technology
-
Endo M
Department Of Physics School Of Science Tokai University
-
Matsuo T
Matsushita Electric Industrial Co. Ltd. (panasonic)
-
Matsuo T
The Author Is With The Tr Production Division Rohm-apollo Device Co. Ltd.
-
YUITO Takashi
Matsushita Electric Industrial Co., Ltd. (Panasonic)
-
WIAUX Vincent
IMEC vzw
-
VAN LOOK
IMEC vzw
-
VANDENBERGHE Geert
IMEC vzw
-
IRIE Shigeo
Matsushita Electric Industrial Co., Ltd. (Panasonic)
-
MATSUO Takahiro
Matsushita Electric Industrial Co., Ltd. (Panasonic)
-
MISAKA Akio
Matsushita Electric Industrial Co., Ltd. (Panasonic)
-
ENDO Masayuki
Matsushita Electric Industrial Co., Ltd. (Panasonic)
-
SASAGO Masaru
Matsushita Electric Industrial Co., Ltd. (Panasonic)
-
Irie S
Semiconductor Leading Edge Technologies Ibaraki Jpn
-
Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
関連論文
- フォトポリマーの研究 : 継続は力なり
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- 大阪府立大学中百舌鳥キャンパス
- Performance Comparison of Real-Time Laser Absorption Spectrometers for NH_3 Detection at 1.54 and 3.03μm in a H_2O Vapor Mixture
- Measurements of NO_2 Concentration with Wide Dynamic Range Based on Laser Absorption Spectroscopy Using a Multi-Pass Optical Cell : Effects of Ambient Temperature Change at the Optical Cell
- Parametric Studies on Improved Laser Cutting Performance of Magnesium Alloy with Two Flow Nozzles
- Trace Methane Detection Based on Raman Spectroscopy Using a High Finesse Optical Resonator
- Performance Characteristics of Power Build-Up Cavity for Raman Spectroscopic Measurement
- Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
- Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- Advanced Surface Modification Resist Process for ArF Lithography
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Modified Constrained Notch Fourier Transform (MCNFT) for Sinusoidal Signals in Noise and Its Performance
- Performance Analyses of Notch Fourier Transform(NFT) and Constrained Notch Fourier Transform(CNFT)
- Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
- Removal of Water Vapor in a Mist Singlet Oxygen Generator for Chemical Oxygen Iodine Laser
- Development of a Mist Singlet Oxygen Generator
- 霧化型励起酸素発生器の基礎研究III
- Numerical Simulation of a Mist Singlet Oxygen Generator(Optics and Quantum Electronics)
- 霧化型励起酸素発生器の基礎研究II
- 霧化型励起酸素発生器の基礎研究
- エポキシ含有フルオレン : ポリシランブレンド系の光架橋
- Two-Dimensional Simulation of and Experiments on the Forward-Backward Modes Coupled Unstable Resonator
- Output Power Enhancement of a Chemical Oxygen-Iodine Laser by Predissociated Iodine Injection
- 化学酸素沃素レｰザｰ(Chemical Oxygen Iodine Laser : COIL)の高圧力動作
- スルホン酸エステル含有エポキシ架橋剤を用いた再可溶化型架橋系
- 新規スルホン酸エステル基を含有するエポキシポリマーの光架橋と水への再溶解
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- 沃素のマイクロ波放電解離を用いた超音速化学酸素沃素レｰザ
- Development of Resist Materials for EUVL
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Timing Jitter Reduction in a Passively Mode-Locked Fiber Laser
- Generation of Tunable Pulses below 345 fs Using a Passively Mode-Locked Fiber Ring Laser with Bulk Components
- Waveform Shaping of a Chemical Oxygen-Iodine Laser Utilizing the Zeeman Effect
- 化学酸素沃素レｰザｰの磁場によるパルス発振
- 化学酸素沃素レーザの磁場による出力制御
- Relations between Several Minimum Distance Bounds of Binary Cyclic Codes
- Overlay Accuracy Measurement Technique Using the Latent Image on a Chemically Amplified Resist
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- リワーク能を有する光架橋・硬化樹脂
- 熱分解型多官能架橋剤を用いたリワーク型光架橋系
- リワーク機能を有する光架橋・硬化樹脂
- Photocrosslinking of Oligomers Bearing Glycidyl Sulfonate Ester Units and Their Redissolution Property
- 水による溶解除去が可能なオキセタン部位含有光架橋性高分子 (特集:光とネットワークポリマー)
- 光重合
- Photocrosslinking and Thermal Degradation of Epoxy-containing Polymers Using Photobase Generators
- 超微細加工用フォトレジスト材料
- Effect of Anions on Photoreacitivity and Stability of Quaternary Ammonium Salts as Photobase Generators
- 光酸・塩基発生剤の開発とその新規フォトポリマー設計における活用
- 再溶解型光架橋・硬化樹脂
- Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo-Induced Radical Polymerization Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo- and Thermochemical Behavior of Quaternary Ammonium Thiocyanates and Their Use as Crosslinkers
- Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- ポリビニルアルコ-ル存在下における塩化第二鉄の光還元反応
- 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
- 熱分解型ジエポキシ化合物を用いた再可溶化型架橋性高分子
- Cutting and Drilling of Inorganic Materials for Civil Engineering Using a Chemical Oxygen-Iodine Laser
- Extension of the ArF Excimer Lithography to Sub-0.10/μm Design Rule Devices Using Bi-layer Silylation Process
- Sub-0.10 μm Hole Fabrication Using Bilayer Silylation Process for 193 nm Lithography
- Fundamental study of the mask topography effect on the advanced phase-shifting masks for next-generation lithography (Special issue: Microprocesses and nanotechnology)
- Approach to Next-Generation Optical Lithography
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Characterization of Fluoropolymer Resist for 157-nm Lithography
- Application of a New BARC Material for 157-nm Lithography
- A study of an Organic Bottom Antireflective Coating for 157-nm Lithography
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
- Surface Modification Resists Using Photoacid and Photobase Generating Polymers
- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
- Positive Surface Modification Resist System
- 亜臨界水を用いた架橋樹脂の分解とケミカルリサイクル (特集 ポリマーの分解とその応用技術)
- FRPの分解とリサイクル (特集:廃棄物の再資源化技術)
- Development of Novel Photosensitive Polymer Systems Using Photoacid and Photobase Generators
- Visible Light Crosslinking of Polymeric Photobase Generators Using Ketobiscoumarins
- 光力システムにおける窒素を用いた高効率超音速化学酸素沃素レーザー
- Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
- 光力システムにおける超音速化学励起沃素レーザーの新型 Jet type 励起酸素発生器の動作特性
- 解説記事 再可溶化できる光架橋型高分子
- グリーンケミストリーと高分子の崩壊と安定化 (特集 グリーンテクノロジーの新展開)
- 高分子材料の光分解性と高分子添加剤 (新春特集 高分子添加剤の開発とグリーンケミストリー)
- 再溶解能を有する光架橋性ポリマー
- メタクリル酸メチル-アクリル酸エステル共重合体の185nm光によるアブレーティブ分解
- Photocrosslinking of Polymers with Ether Units Using Imino Sulfonate Photoacid Generators
- ポリクラウンエ-テルを用いるイオンクロマトグラフィ-
- “Mask Enhancer” Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249 μm2 Static Random Access Memory Contact Layer Fabrication