Irie S | Semiconductor Leading Edge Technologies Ibaraki Jpn

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概要

• Irie Shigeoの詳細を見る
• 同名の論文著者
• Semiconductor Leading Edge Technologies Ibaraki Jpnの論文著者

関連著者

• Irie S

  Semiconductor Leading Edge Technologies Ibaraki Jpn

• Irie Shigeo

  Semiconductor Leading Edge Technologies Inc. (selete)

• Endo M

  Department Of Physics School Of Science Tokai University

• IRIE Shigeo

  Matsushita Electric Industrial Co., Ltd. (Panasonic)

• ENDO Masayuki

  Matsushita Electric Industrial Co., Ltd. (Panasonic)

• SASAGO Masaru

  Matsushita Electric Industrial Co., Ltd. (Panasonic)

• Sasago M

  Assoc. Super‐advanced Electronics Technol. Yokohama Jpn

• Kametani Hitoshi

  General Research Laboratory Mitubishi Electric Corporation

• Kondo H

  The Institute Of Scientific And Industrial Research Osaka University

• ENDO Masamori

  Department of Physics, School of Science, Tokai University

• Kondo Hideyuki

  Central Research Institute Mitsubishi Materials Corporation

• Mori S

  Department Of Electric And Electrical Engineering School Of Science And Engineering Saga University

• MURAKAMI Katsuhiko

  Nikon Corporation

• Kondo H

  Nikon Corp.

• Itani T

  Selete Tsukuba Jpn

• Sasago M

  Matsuisita Electric Industrial Co. Ltd. Kyoto Jpn

• Sasago Masaru

  Matsushita Electric Industrial Co.

• KANDAKA Noriaki

  Nikon Co.

• KONDO Hiroyuki

  Nikon Co.

• Itani T

  Semiconductor Leading Edge Technologies Inc. (selete)

• HAGIWARA Takuya

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• Kandaka N

  Nikon Corp.

• Sasago M

  Matsushita Electric Industrial Corp. Ltd.

• Hagiwara Takuya

  Semiconductor Leading Edge Technologies Inc. (selete)

• Shirayone S

  Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn

• Shigematsu M

  Selete Tsukuba Jpn

• MURAKAMI Katsuhiko

  Nikon Corp.

• Oizumi H

  Hitachi Ltd. Tokyo Jpn

• Oizumi H

  Aset Euvl Lab. Kanagawa Jpn

• Oizumi Hiroaki

  Sortec Corporation

• Matsuo Taku

  The Department Of Computer Science And Electronics Kyushu Institute Of Technology

• MATSUZAWA Nobuyuki

  Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c

• OIZUMI Hiroaki

  o NTT Atsugi R&D Center

• MORI Shigeyasu

  Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c

• IRIE Shigeo

  o NTT Atsugi R&D Center

• SHIRAYONE Shigeru

  Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c

• YANO Ei

  o NTT Atsugi R&D Center

• OKAZAKI Shinji

  Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c

• ISHITANI Akihiko

  o NTT Atsugi R&D Center

• DIXON David

  Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c

• ISHIKAWA Seiichi

  Semiconductor Leading Edge Technolgies, Inc.

• ITANI Toshiro

  Semiconductor Leading Edge Technolgies, Inc.

• Matsuo T

  Matsushita Electric Industrial Co. Ltd. (panasonic)

• Matsuo T

  The Author Is With The Tr Production Division Rohm-apollo Device Co. Ltd.

• YUITO Takashi

  Matsushita Electric Industrial Co., Ltd. (Panasonic)

• WIAUX Vincent

  IMEC vzw

• VAN LOOK

  IMEC vzw

• VANDENBERGHE Geert

  IMEC vzw

• MATSUO Takahiro

  Matsushita Electric Industrial Co., Ltd. (Panasonic)

• MISAKA Akio

  Matsushita Electric Industrial Co., Ltd. (Panasonic)

• YANO Ei

  Fujitsu Laboratories Ltd.

• Dixon David

  Atsugi Research Center Association Of Super-advanced Electronics Technologies (aset) C

• Takebe Yoko

  Asahi Glass Co. Ltd.

• Okada Shinji

  Asahi Glass Co. Ltd.

• Okazaki S

  Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn

• FURUKAWA Takamitsu

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• Ishikawa Seiichi

  Semiconductor Leading Edge Technolgies Inc.

• YAMAZAKI Tamio

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• KAWAGUCHI Yasuhide

  Asahi Glass Co., Ltd.

• KODAMA Syun-ichi

  Asahi Glass Co., Ltd.

• YOKOKOJI Osamu

  Asahi Glass Co., Ltd.

• KANEKO Isamu

  Asahi Glass Co., Ltd.

• Ishitani A

  O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat

• Matsuzawa N

  Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn

• Kaneko Isamu

  Asahi Glass Co. Ltd.

• Yamazaki T

  Semiconductor Leading Edge Technologies Inc. (selete)

• Yamazaki Tamio

  Semiconductor Leading Edge Technologies Inc.

• Yokokoji O

  Asahi Glass Co. Ltd.

• Itani Toshiro

  Semiconductor Leading Edge Technol. Ibaraki Jpn

• Furukawa Takamitsu

  Semiconductor Leading Edge Technologies Inc. (selete)

• Kawaguchi Y

  Asahi Glass Co. Ltd.

• Ishitani Akihiko

  o NTT Atsugi R&D Center:(Permanant address)Semiconductor Company, Matsushita Electronics Corporation.

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著作論文

• Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
• "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
• Development of Resist Materials for EUVL
• Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
• Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
• 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
• Characterization of Fluoropolymer Resist for 157-nm Lithography
• Application of a New BARC Material for 157-nm Lithography
• A study of an Organic Bottom Antireflective Coating for 157-nm Lithography

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