Irie Shigeo | Semiconductor Leading Edge Technologies Inc. (selete)
スポンサーリンク
概要
関連著者
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Irie S
Semiconductor Leading Edge Technologies Ibaraki Jpn
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Irie Shigeo
Semiconductor Leading Edge Technologies Inc. (selete)
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Kametani Hitoshi
General Research Laboratory Mitubishi Electric Corporation
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Kondo H
The Institute Of Scientific And Industrial Research Osaka University
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ENDO Masamori
Department of Physics, School of Science, Tokai University
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Endo M
Department Of Physics School Of Science Tokai University
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Kondo Hideyuki
Central Research Institute Mitsubishi Materials Corporation
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Mori S
Department Of Electric And Electrical Engineering School Of Science And Engineering Saga University
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MURAKAMI Katsuhiko
Nikon Corporation
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IRIE Shigeo
Matsushita Electric Industrial Co., Ltd. (Panasonic)
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ENDO Masayuki
Matsushita Electric Industrial Co., Ltd. (Panasonic)
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SASAGO Masaru
Matsushita Electric Industrial Co., Ltd. (Panasonic)
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Kondo H
Nikon Corp.
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Itani T
Selete Tsukuba Jpn
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Sasago M
Matsuisita Electric Industrial Co. Ltd. Kyoto Jpn
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Sasago Masaru
Matsushita Electric Industrial Co.
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KANDAKA Noriaki
Nikon Co.
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KONDO Hiroyuki
Nikon Co.
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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Itani T
Semiconductor Leading Edge Technologies Inc. (selete)
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HAGIWARA Takuya
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Kandaka N
Nikon Corp.
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Sasago M
Matsushita Electric Industrial Corp. Ltd.
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Hagiwara Takuya
Semiconductor Leading Edge Technologies Inc. (selete)
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Shirayone S
Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn
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Shigematsu M
Selete Tsukuba Jpn
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MURAKAMI Katsuhiko
Nikon Corp.
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Oizumi H
Hitachi Ltd. Tokyo Jpn
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Oizumi H
Aset Euvl Lab. Kanagawa Jpn
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Oizumi Hiroaki
Sortec Corporation
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MATSUZAWA Nobuyuki
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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OIZUMI Hiroaki
o NTT Atsugi R&D Center
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MORI Shigeyasu
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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IRIE Shigeo
o NTT Atsugi R&D Center
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SHIRAYONE Shigeru
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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YANO Ei
o NTT Atsugi R&D Center
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OKAZAKI Shinji
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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ISHITANI Akihiko
o NTT Atsugi R&D Center
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DIXON David
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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ISHIKAWA Seiichi
Semiconductor Leading Edge Technolgies, Inc.
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ITANI Toshiro
Semiconductor Leading Edge Technolgies, Inc.
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YANO Ei
Fujitsu Laboratories Ltd.
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Dixon David
Atsugi Research Center Association Of Super-advanced Electronics Technologies (aset) C
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Takebe Yoko
Asahi Glass Co. Ltd.
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Okada Shinji
Asahi Glass Co. Ltd.
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Okazaki S
Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn
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FURUKAWA Takamitsu
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Ishikawa Seiichi
Semiconductor Leading Edge Technolgies Inc.
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YAMAZAKI Tamio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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KAWAGUCHI Yasuhide
Asahi Glass Co., Ltd.
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KODAMA Syun-ichi
Asahi Glass Co., Ltd.
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YOKOKOJI Osamu
Asahi Glass Co., Ltd.
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KANEKO Isamu
Asahi Glass Co., Ltd.
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Ishitani A
O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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Matsuzawa N
Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn
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Kaneko Isamu
Asahi Glass Co. Ltd.
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Yamazaki T
Semiconductor Leading Edge Technologies Inc. (selete)
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Yamazaki Tamio
Semiconductor Leading Edge Technologies Inc.
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Yokokoji O
Asahi Glass Co. Ltd.
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Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
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Furukawa Takamitsu
Semiconductor Leading Edge Technologies Inc. (selete)
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Kawaguchi Y
Asahi Glass Co. Ltd.
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Ishitani Akihiko
o NTT Atsugi R&D Center:(Permanant address)Semiconductor Company, Matsushita Electronics Corporation.
著作論文
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- Development of Resist Materials for EUVL
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
- Characterization of Fluoropolymer Resist for 157-nm Lithography
- Application of a New BARC Material for 157-nm Lithography
- A study of an Organic Bottom Antireflective Coating for 157-nm Lithography