Characterization of Fluoropolymer Resist for 157-nm Lithography

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Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
"Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
Development of Resist Materials for EUVL
Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
Dissolution Characteristics of Chemically Amplified DUV Resists
Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists
A Study of Photoacid Structure Dependence on Lithographic Performance in Chemically Amplified Resists
157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
Deblocking Reaction of Chemically Amplified Positive DUV Resists
Characterization of Fluoropolymer Resist for 157-nm Lithography
Progress in Top Surface Imaging Process
Process Characterization of Bi-layer Silylation Process for l93-nm Lithography
Dissolution Kinetics Analysis for Chemically Amplified Deep Ultraviolet Resist
Application of a New BARC Material for 157-nm Lithography
A study of an Organic Bottom Antireflective Coating for 157-nm Lithography
Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist

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