Development of Resist Materials for EUVL

スポンサーリンク

概要

著者

関連論文

Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
Plasma Opening Switch Using Plasmas Produced by a Pulsed CO_2 Laser
Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
Spatial Current Distribution Inside the Switch Region of a Plasma Opening Switch with Coaxial Configuration
"Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
Advanced Surface Modification Resist Process for ArF Lithography
Development of Resist Materials for EUVL
Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
Silylation for Carboxylic Acids
Study of High Photo-speed Top Surface Imaging Process Using Chemically Amplified Resist
Diffusion Kinetic of Vapor-phase Silylation Process for ArF Lithography
Dependence of ECR Plasma Etching Characteristics on Sub Magnetic Field and Substrate Position
Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
Characterization of Fluoropolymer Resist for 157-nm Lithography
Application of a New BARC Material for 157-nm Lithography
A study of an Organic Bottom Antireflective Coating for 157-nm Lithography

もっと見る

スポンサーリンク