Advanced Surface Modification Resist Process for ArF Lithography
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概要
著者
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ENDO Masamori
Department of Physics, School of Science, Tokai University
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Endo M
Department Of Physics School Of Science Tokai University
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Mori S
Department Of Electric And Electrical Engineering School Of Science And Engineering Saga University
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Matsuo T
Matsushita Electric Industrial Co. Ltd. (panasonic)
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Matsuo T
Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn
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Matsuo Takahiro
Matsushita Electric Industrial Co. Ltd. (panasonic)
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Tsunooka M
Osaka Prefecture Univ. Osaka Jpn
関連論文
- 化学酸素沃素レｰザｰ(Chemical Oxygen-Iodine Laser : COIL)の原子炉解体への応用
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
- Plasma Opening Switch Using Plasmas Produced by a Pulsed CO_2 Laser
- Performance Comparison of Real-Time Laser Absorption Spectrometers for NH_3 Detection at 1.54 and 3.03μm in a H_2O Vapor Mixture
- Measurements of NO_2 Concentration with Wide Dynamic Range Based on Laser Absorption Spectroscopy Using a Multi-Pass Optical Cell : Effects of Ambient Temperature Change at the Optical Cell
- Parametric Studies on Improved Laser Cutting Performance of Magnesium Alloy with Two Flow Nozzles
- Trace Methane Detection Based on Raman Spectroscopy Using a High Finesse Optical Resonator
- Performance Characteristics of Power Build-Up Cavity for Raman Spectroscopic Measurement
- Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
- Spatial Current Distribution Inside the Switch Region of a Plasma Opening Switch with Coaxial Configuration
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- Advanced Surface Modification Resist Process for ArF Lithography
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Modified Constrained Notch Fourier Transform (MCNFT) for Sinusoidal Signals in Noise and Its Performance
- Performance Analyses of Notch Fourier Transform(NFT) and Constrained Notch Fourier Transform(CNFT)
- Removal of Water Vapor in a Mist Singlet Oxygen Generator for Chemical Oxygen Iodine Laser
- Development of a Mist Singlet Oxygen Generator
- 霧化型励起酸素発生器の基礎研究III
- Numerical Simulation of a Mist Singlet Oxygen Generator(Optics and Quantum Electronics)
- 霧化型励起酸素発生器の基礎研究II
- 霧化型励起酸素発生器の基礎研究
- Two-Dimensional Simulation of and Experiments on the Forward-Backward Modes Coupled Unstable Resonator
- Output Power Enhancement of a Chemical Oxygen-Iodine Laser by Predissociated Iodine Injection
- 化学酸素沃素レｰザｰ(Chemical Oxygen Iodine Laser : COIL)の高圧力動作
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- 沃素のマイクロ波放電解離を用いた超音速化学酸素沃素レｰザ
- Development of Resist Materials for EUVL
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Silylation for Carboxylic Acids
- Study of High Photo-speed Top Surface Imaging Process Using Chemically Amplified Resist
- Diffusion Kinetic of Vapor-phase Silylation Process for ArF Lithography
- Dependence of ECR Plasma Etching Characteristics on Sub Magnetic Field and Substrate Position
- Timing Jitter Reduction in a Passively Mode-Locked Fiber Laser
- Generation of Tunable Pulses below 345 fs Using a Passively Mode-Locked Fiber Ring Laser with Bulk Components
- Waveform Shaping of a Chemical Oxygen-Iodine Laser Utilizing the Zeeman Effect
- 化学酸素沃素レｰザｰの磁場によるパルス発振
- 化学酸素沃素レーザの磁場による出力制御
- Relations between Several Minimum Distance Bounds of Binary Cyclic Codes
- Consideration of Silylation Contrast in an ArF Liquid-Phase Silylation Process
- Overlay Accuracy Measurement Technique Using the Latent Image on a Chemically Amplified Resist
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
- Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
- レーザー オリジナル Development of a Nitrogen Dioxide Gas Sensor Based on Mid-Infrared Absorption Spectroscopy
- Phase-Transfer Photopolymerization of Methyl Methacrylate with N-Cetylpyridinium Chloride-KSCN-CCl4 in an Aqueous-Organic Two-Phase System
- Phase-Transfer Photopolymerization of Methyl Methacrylate with Tetrabutylammonium Chloride-KSCN-CCI_4 in an Aqueous-Organic Two-Phase System
- Photopolymerization of Methyl Methacrylate with N-Cetylpyridinium Chloride-KSCN-CCI_4 in Aqueous System
- Cutting and Drilling of Inorganic Materials for Civil Engineering Using a Chemical Oxygen-Iodine Laser
- Extension of the ArF Excimer Lithography to Sub-0.10/μm Design Rule Devices Using Bi-layer Silylation Process
- Sub-0.10 μm Hole Fabrication Using Bilayer Silylation Process for 193 nm Lithography
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
- Surface Modification Resists Using Photoacid and Photobase Generating Polymers
- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
- Positive Surface Modification Resist System
- 光力システムにおける窒素を用いた高効率超音速化学酸素沃素レーザー
- 光力システムにおける超音速化学励起沃素レーザーの新型 Jet type 励起酸素発生器の動作特性
- “Mask Enhancer” Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249 μm2 Static Random Access Memory Contact Layer Fabrication
- Bilayer Resist Method for Room-Temperature Nanoimprint Lithography