Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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ENDO Masamori
Department of Physics, School of Science, Tokai University
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Endo M
Department Of Physics School Of Science Tokai University
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Mori S
Department Of Electric And Electrical Engineering School Of Science And Engineering Saga University
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MORI Shigeyasu
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
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SASAGO Masaru
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
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Matsuo T
Matsushita Electric Industrial Co. Ltd. (panasonic)
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KUHARA Koichi
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
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MORISAWA Taku
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
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MATSUZAWA Nobuyuki
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
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KAIMOTO Yuko
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
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ENDO Masayuki
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
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MATSUO Takahiro
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
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Kaimoto Y
Yokohama Research Center Association Of Super-advanced Electronics Technologies (aset)
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Morisawa T
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Ce
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Morisawa T
Hitachi Ltd. Tokyo Jpn
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Kuhara K
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Se
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Kuhara Koichi
Tsukuba Research Center Sanyo Electric Co. Ltd.
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Sasago Masaru
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address)uls
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Matsuo Takahiro
Matsushita Electric Industrial Co. Ltd. (panasonic)
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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Tsunooka M
Osaka Prefecture Univ. Osaka Jpn
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Matsuzawa N
Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn
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