Post-Exposure-Bake Simulation Model with Constant Acid Loss of Chemically Amplified Resist
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-30
著者
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YANO Ei
Fujitsu Laboratories Ltd.
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Kaimoto Y
Yokohama Research Center Association Of Super-advanced Electronics Technologies (aset)
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Kaimoto Yuko
Fujitsu Limited
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Miyata S
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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HANYU Isamu
Fujitsu Laboratories Ltd.
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Hanyu Isamu
Fujitsu Limited
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Yano Ei
Fujitsu Laboratories
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YANAGISHITA Yuichiro
Fujitsu Limited
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MIYATA Shuichi
Fujitsu Limited
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OIKAWA Akira
Fujitsu Limited
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Oikawa A
Fujitsu Limited
関連論文
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- A New Single-Layer Resist for 193-nm Lithography
- Study of Bi-level Resist System with Conductive Bottom Layer for EB Lithography
- A Novel Polymer for a 193-nm Resist
- Silylation for Carboxylic Acids
- Study of High Photo-speed Top Surface Imaging Process Using Chemically Amplified Resist
- Modeling Thermal Effects for Simulation of Post Exposure Baking (PEB) Process in Positive Photoresist
- High Etch-resistant EB Resists Employing Adamantyl Protective Groups and Their Application for 248-nm Lithography
- Post-Exposure-Bake Simulation Model with Constant Acid Loss of Chemically Amplified Resist
- Pitch Dependence of Linewidth in the 0.25 μm Patterns Fabricated Using Positive Chemically Amplified Resist
- Coherency Dependence of Projection Printing Method Using a Phase-Shifting Mask
- Resolution Limit for Optical Lithography Using Polarized Light Illumination
- FOREWORD
- MASCOT: Mask Pattern Correction Tool Using Genetic Algorithm
- A Resolution Enhancement Material for 193-nm Lithography Comprising 2-Hydroxybenzyl Alcohol and Poly(vinyl alcohol) with Uniform Resist Pattern Shrinkage
- Simple Method of Correcting Optical Proximity Effect for 0.35 µm Logic LSI Circuits