High Etch-resistant EB Resists Employing Adamantyl Protective Groups and Their Application for 248-nm Lithography
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関連論文
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- A New Single-Layer Resist for 193-nm Lithography
- Study of Bi-level Resist System with Conductive Bottom Layer for EB Lithography
- A Novel Polymer for a 193-nm Resist
- High Etch-resistant EB Resists Employing Adamantyl Protective Groups and Their Application for 248-nm Lithography
- Post-Exposure-Bake Simulation Model with Constant Acid Loss of Chemically Amplified Resist
- A Resolution Enhancement Material for 193-nm Lithography Comprising 2-Hydroxybenzyl Alcohol and Poly(vinyl alcohol) with Uniform Resist Pattern Shrinkage