Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-30
著者
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Ogawa Tohru
Technology Strategy Development Sony Co. Core Technology & Network Company
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OGAWA Tohru
Association of Super-Advanced Electronics Technologies
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UEMATSU Masaya
Association of Super-Advanced Electronics Technologies
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ONODERA Toshio
Association of Super-Advanced Electronics Technologies
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NAKAZAWA Keisuke
Association of Super-Advanced Electronics Technologies
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TAKAHASHI Makoto
Association of Super-Advanced Electronics Technologies
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OHFUJI Takeshi
Association of Super-Advanced Electronics Technologies
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OHTSUKA Hiroshi
Association of Super-Advanced Electronics Technologies
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SASAGO Masaru
Association of Super-Advanced Electronics Technologies
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Matsuo T
Semiconductor Leading Edge Technologies Inc
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Takahashi M
Tokyo Univ. Pharmacy And Life Sci. Tokyo Jpn
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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Uematsu M
Ntt Basic Research Laboratories Ntt Corporation
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Ohfuji T
Semiconductor Leading Edge Technologies Inc. (selete)
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Ohtsuka H
Association Of Super-advanced Electronics Technologies:(present) Semiconductor Leading Edge Technolo
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Nakazawa K
Process & Manufacturing Engineering Center Toshiba Co. Semicoundactor Company
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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Sasago M
Matsushita Electric Industrial Corp. Ltd.
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Uematsu Masaya
NTT Basic Research Laboratories, NTT Corporation
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