X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-12-30

著者

• YAMASHITA Yoshio

  SORTEC Corporation

• Oizumi H

  Hitachi Ltd. Tokyo Jpn

• Oizumi H

  Aset Euvl Lab. Kanagawa Jpn

• Oizumi Hiroaki

  Sortec Corporation

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Ogawa Tohru

  Technology Strategy Development Sony Co. Core Technology & Network Company

• Yoshida Yoichi

  The Institute Of Scientific And Industrial Research Osaka University

• OGAWA Taro

  Central Research Laboratory, Hitachi Ltd.

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• Yamada Yasusada

  Advanced Research Institute Waseda University:advanced Science Research Center Japan Atomic Energy R

• Yamashita Y

  Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation

• Yamashita Yohachi

  Corporate R&d Center Toshiba Corporation

• Yamashita Yohachi

  Toshiba Materials & Devices Research Laboratories

• Yamaguchi Yoh-ichi

  Hoya Corporation

• SOGA Takashi

  Central Research Laboratory, Hitachi, Ltd.

• Yamashita Yoshio

  Sortec Corporation:(present Address) Oki Electric Industry Co. Ltd.

• YAMANAKA Ryoko

  Central Research Laboratory, Hitachi Limited

• Yamashita Yasuharu

  Synthetic Crystal Research Laboratory School Of Engineering Nagoya University

• Ogawa Taro

  Central Research Laboratory Hitachi Ltd.

• Soga Takashi

  Central Research Laboratory Hitachi Limited

• Yamanaka Ryoko

  Central Research Laboratory Hitachi Limited

• Yamashita Y

  Central Research Laboratory Hamamatsu Photonics K.k.

関連論文

• Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
• Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
• Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
• Initial Condition and Calculation Method for the Numerical Simulation of LPE
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
• Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
• Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
• Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
• The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
• Optical Observation of Heterophase and Domain Structures in Relaxor Ferroelectrics Pb(Zn_Nb_)O_3/9% PbTiO_3
• Diffuse Optical Tomography using Time-resolved Photon Path Distribution
• Calculation of Photon Path Distribution Based on Photon Behavior Analysis in a Scattering Medium
• Average Value Method:A New Approach to Practical Optical Computed Tomography for a Turbid Medium Such as Human Tissue
• Functionalized Carbon Nanotubes for Mixed Matrix Membrane
• Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
• High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
• Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
• Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
• Electroplated Reflection Masks for Soft X-Ray Projection Lithography
• Resist Performance in 5 nm Soft X-Ray Projection Lithography
• Reduction Imaging at 4.5 nm with Schwarzschild Optics
• Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
• Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
• Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
• Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
• Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
• F-K XANES Studies of Alkali Fluorides
• F-K XANES Studies of Alkaline-Earth Fluorides
• Wet-silylation Process for X-ray and EUV Lithographies
• X-Ray Mask Technology Utilizing an Optical Stepper
• X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
• Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
• Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
• Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
• Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
• X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
• Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
• New Dry Surface-Imaging Process for X-Ray Lithography
• Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
• Freeze-Drying Process to Avoid Resist Pattern Collapse
• X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
• Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
• Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon
• Consideration of Solvent Effect on Precipitation Polymerization of Poly(ether-ketone)s via Friedel-Craft Acylation
• Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
• Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
• Pyroelectric Infrared Sensor Using Modified PbTiO_3 Ceramics
• Polymerization Behavior of Poly(ether ketone) via Friedel-Crafts Acylation Studied by End-Group Analysis with H NMR
• Synthesis of Thermally Cross-Linkable Fluorine-containing Poly(aryl ether ketone)s I. Phenylethynyl Terminated Poly(aryl ether ketone)s
• Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
• Synthesis of Novel Fluorine-Containing Poly(aryl ether nitrile)s Derived from 2,3,4,5,6-Pentafluorobenzonitrile
• Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
• Metalorganic Chemical Vapor Deposition Growth of GaN Using a Split-flow Reactor
• Quantitation of Absorbers in Turbid Media Using Time-Integrated Spectroscopy Based on Microscopic Beer-Lambert Law
• Simple Subtraction Method for Determining the Mean Path Length Traveled by Photons in Turbid Media
• Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism
• Improvement in Radiation Stability of SiN X-Ray Mask Membranes
• Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition
• Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
• Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Down to 0.1 μm Pattern Replication in Synchrotron Radiation Lithography
• Sub-0.1μm Patterning with High Aspect Ratio of 5 Achieved by Preventing Pattern Collapse

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