Sub-0.1μm Patterning with High Aspect Ratio of 5 Achieved by Preventing Pattern Collapse
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-15
著者
-
YAMASHITA Yoshio
SORTEC Corporation
-
Yamashita Yoshio
Sortec Corporation:(present Address) Oki Electric Industry Co. Ltd. Semiconductor Technology Laborat
関連論文
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- Optical Observation of Heterophase and Domain Structures in Relaxor Ferroelectrics Pb(Zn_Nb_)O_3/9% PbTiO_3
- Diffuse Optical Tomography using Time-resolved Photon Path Distribution
- Calculation of Photon Path Distribution Based on Photon Behavior Analysis in a Scattering Medium
- Average Value Method:A New Approach to Practical Optical Computed Tomography for a Turbid Medium Such as Human Tissue
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Resist Performance in 5 nm Soft X-Ray Projection Lithography
- Reduction Imaging at 4.5 nm with Schwarzschild Optics
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
- Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon
- Consideration of Solvent Effect on Precipitation Polymerization of Poly(ether-ketone)s via Friedel-Craft Acylation
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
- Pyroelectric Infrared Sensor Using Modified PbTiO_3 Ceramics
- Polymerization Behavior of Poly(ether ketone) via Friedel-Crafts Acylation Studied by End-Group Analysis with H NMR
- Synthesis of Thermally Cross-Linkable Fluorine-containing Poly(aryl ether ketone)s I. Phenylethynyl Terminated Poly(aryl ether ketone)s
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Synthesis of Novel Fluorine-Containing Poly(aryl ether nitrile)s Derived from 2,3,4,5,6-Pentafluorobenzonitrile
- Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
- Metalorganic Chemical Vapor Deposition Growth of GaN Using a Split-flow Reactor
- Quantitation of Absorbers in Turbid Media Using Time-Integrated Spectroscopy Based on Microscopic Beer-Lambert Law
- Simple Subtraction Method for Determining the Mean Path Length Traveled by Photons in Turbid Media
- Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism
- Improvement in Radiation Stability of SiN X-Ray Mask Membranes
- Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition
- Down to 0.1 μm Pattern Replication in Synchrotron Radiation Lithography
- Sub-0.1μm Patterning with High Aspect Ratio of 5 Achieved by Preventing Pattern Collapse