Down to 0.1 μm Pattern Replication in Synchrotron Radiation Lithography
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概要
- 論文の詳細を見る
We studied sub-quarter- to sub-0.1-μm pattern replication characteristics in synchrotron radiation (SR) lithography using a highly accurate low-contrast mask. AZ-PN100 (a chemical amplification negative-type resist) has a wide exposure latitude of more than ±10% for lines and spaces down to 0.12 μm at a post exposure baking temperature of 110℃. Lines and spaces down to 0.1 μm were clearly replicated in AZ-PN100. Sub-0.1-μm lines and spaces and various types of pattern with 0.1 μm features were successfully replicated in ZEP-520. These results indicate that SR lithography has potential for 0.1-μm pattern replication. Insufficient mask linearity reduced the common exposure latitude. However, the mask feature bias technique can be used to expand the common exposure latitude.
- 社団法人応用物理学会の論文
- 1996-07-15
著者
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YAMASHITA Yoshio
SORTEC Corporation
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Nakao Masao
Microelectronics Research Center Sanyo Electric Co. Ltd.
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MORIGAMI Mitsuaki
SORTEC Corporation
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Nishino J
Sanyo Electric Co. Ltd. Anpachi‐gun Jpn
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Nishino Junichi
Microelectronics Research Center Sanyo Electric Co. Ltd.
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YAMAOKA Yoshikazu
Microelectronics Research Center, Sanyo Electric Co., Ltd.
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Morigami Mitsuaki
Sortec Corporation:(present Address) Microelectronics Research Center Sanyo Electric Co. Ltd.
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Yamaoka Yoshikazu
Microelectronics Research Center Sanyo Electric Co. Ltd.
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