Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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YAMASHITA Yoshio
SORTEC Corporation
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Yamashita Y
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
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Yamaguchi Yoh-ichi
Hoya Corporation
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Yamashita Y
Graduate School Of Natural Science And Technology Okayama University
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Kamiura Y
Graduate School Of Natural Science And Technology Okayama University
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YAMASHITA Yoshifumi
Graduate School of Natural Science and Technology, Okayama University
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SAKAMOTO Yoshifumi
Graduate School of Natural Science and Technology, Okayama University
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KAMIURA Yoichi
Graduate School of Natural Science and Technology, Okayama University
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ISHIYAMA Takeshi
Graduate School of Natural Science and Technology, Okayama University
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