Spectroscopic Study of Rapid Mixing and Cooling of a High-Density He Plasma Flow Penetrating into Hydrogen Gas

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-07-15

著者

• Oda Toshiatsu

  Department Of Applied Physics Faculty Of Engineering Hiroshima University

• Oda Toshiatsu

  Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University

• TAKIYAMA Ken

  Department of Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University

• KAMIURA Yoshitomo

  College of Integrated Arts and Sciences, University of Osaka Prefecture

• MIYOSHI Kozo

  Department of Applied Physics, Faculty of Engineering, Hiroshima University

• MISE Kimihiro

  Department of Applied Physics, Faculty of Engineering, Hiroshima University

• FURUKANE Utaro

  Faculty of Engineering, Hiroshima Denki-Institute of Technology

• Takiyama K

  Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University

• Takiyama Ken

  Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University

• Miyoshi Kozo

  Department Of Applied Physics Faculty Of Engineering Hiroshima University

• Kamiura Yoshitomo

  College Of Integrated Arts And Sciences University Of Osaka Prefecture

• Furukane U

  Hiroshima Denki Inst. Technol. Hiroshima Jpn

• Furukane Utaro

  Faculty Of Engineering Hiroshima Denki Institute Of Technology

• Mise Kimihiro

  Department Of Applied Physics Faculty Of Engineering Hiroshima University

• Kamiura Y

  Graduate School Of Natural Science And Technology Okayama University

• Miyoshi K

  Ulsi Device Development Laboratory Nec Corporation

関連論文

• Direct Measurement of Sheath Electric Field Distribution in Front of Substrate in Electron Cyclotron Resonance Plasma by Laser-Induced Fluorescence Technique
• Two-Dimensional Measurement of He Metastable Atom Density Profile in Front of Substrate in Electron Cyclotron Resonance Plasma Flow by Laser-Induced Fluorescence Spectroscopy
• Spatial Distribution of He Metastable Atoms in Electron Cyclotron Resonance Plasma
• Fast Numerical Calculation for a Set of Nonlinear Rate Equations : Application to Rapid Ionizaton Phase in Plasma
• Spectroscopic Study of Rapid Mixing and Cooling of a High-Density He Plasma Flow Penetrating into Hydrogen Gas
• Population Inversion in Mixing Hydrogen Gas with a High Temperature Plasma
• Population Inversion in a Recombining Helium Plasma Mixing with Hydrogen Molecular Gas in a TPD-I Machine
• Contribution of the Charge-Exchange Process for Inverted Population in a Recombining Plasma
• Gas-Contact Cooling for VUV Laser Oscillation in Recombining Plasmas
• Cascade Fluorescences from Laser-Excited Lithium Atoms Immersed in a Static Electric Field for Plasma Diagnostics
• Fast Calculation Method for the Rate Equations of Plasma
• ESR Study of Neutron-Irradiated LiCl Crystals
• Defects Produced in Germanium by Quenching and Electron Irradiation
• A Copper-Related Shallow Acceptor in Quenched Germanium
• One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
• High Density Excitation Effect of the Indirect Band Luminescence in Thallous Halides
• Resonance Raman Scattering in Thallous Chloride
• Magneto-Optical Absorption in Thallous Iodide of CsCl Structure
• The Optical Absorption in Cubic PbF_2 Crystal Induced with γ-Ray Irradiation at Liquid-Helium Temperature
• Forbidden Transitions of LiI in Laser-Induced Fluorescence Spectroscopy for the Measurement of Low-Frequency Electric Fields in Plasmas
• Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
• Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
• Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon
• Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
• Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
• Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
• Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
• Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism
• Investigation of Reoxidation and Phosphorus Behavior in HF-Treated Heavily Doped Silicon Surfaces
• Measurement of Density Distribution of Metastable He Atom in a Plane-Parallel Hollow Cathode He Plasma
• The F-Center Emission in LiCl
• Far-Infrared Optical Properties of Quenched Germanium; V. Uniaxial Stress Effects on the SA_1 Acceptors : Semiconductors and Semiconductor Devices
• Far-Infrared Optical Properties of Quenched Germanium : IV. Uniaxial Stress Effects on the SA_2 Acceptor
• Measurement of Intensity and Polarization of HeI Forbidden Lines for Diagnostics of Electric Field in a Plasma
• Far-Infrared Optical Properties of Quenched Germanium III. : Effects of Additional Impurities
• Far-Infrared Optical Properties of Quenched Germanium. : II. Magnetic Field Effects
• Far-Infrared Optical Properties of Quenched Germanium I.: The Temperature Dependence of the Absorption and the Photothermal Ionization Spectra
• Microwave Investigation of Plasma in Shock Tube
• Spatial Distribution of He Metastable Atoms in Electron Cyclotron Resonance Plasma
• Resolution Enhancement of Hole Patterns in Sychrotron Radiation Lithography
• X-Ray Phase-Shifting Mask for 0.1-μm Pattern Replication under a Large Proximity Gap Condition
• Patterning Characteristics of a Chemically-Amplified Negative Resist in Synchrotron Radiation Lithography
• The Fundamental Absorption Edge and Electronic Structure in Sb_2S_3
• Electroabsorption of Indirect Forbidden Exciton in TlBr
• Influence of Collision and Beam temperature on the High Frequency Instability in a Beam-Plasma System
• Patterning Characteristics of 0.1-μm Line-and-Space Patternin Synchrotron Radiation Lithography
• Proximity Effect on Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography
• Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
• Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation
• Influence of a Transverse Magnetic Field on the Spectral Lines from Shock-Ionized Gases
• Cascade Fluorescences from Laser-Excited Lithium Atom for Plasma Diagnostics
• SPECTRAL LINE PROFILE AND ITS APPLICATION TO PLASMA DIAGNOSTICS
• Fast Numerical Calculation for a Set of Nonlinear Rate Equations: Application to Rapid Ionizaton Phase in Plasma
• Quantum Size Effect of Semiconductor Microcrystallites Doped in SiO2-Glass Thin Films Prepared by Rf-Sputtering

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