The Fundamental Absorption Edge and Electronic Structure in Sb_2S_3
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概要
- 論文の詳細を見る
Absorption spectra near the fundamental absorption edge are studied in Sb.S..Step-like structures characteristics to the indirect allowed exciton transition arefound. The energy of the indirect exciton is determined to be 1.749 eV at 27 K. Theband structure is calculated by the pseudopotential method and compared with the ex-perimental results. It is shown that the top of the valence band and the bottom of theconduction band lie around T and X points, respectively, and that the smallest directgap is located at around the X point.
- 社団法人日本物理学会の論文
- 1987-10-15
著者
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Oda Toshiatsu
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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TAKIYAMA Ken
Department of Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University
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Takiyama K
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Takiyama Ken
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Fujita Toshiaki
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Kurita K
Mitsubishi Heavy Ind. Ltd. Hiroshima Jpn
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Kurita Koichi
Mitsubishi Heavy Industries Ltd. Hiroshima R & D Center
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KURITA Koichi
Department of Applied Physics and Chemistry,Faculty of Engineering,Hiroshima University
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Oda Toshiatsu
Department of Applied Physics and Chemistry,Faculty of Engineering,Hiroshima University
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