Quantum Size Effect of Semiconductor Microcrystallites Doped in SiO2-Glass Thin Films Prepared by Rf-Sputtering

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概要

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• Semiconductors such as CdTe, CdSe and GaAs, microcrystallites could be successfully doped into SiO2-glass films by the magnetron rf-sputtering technique. The average size of the microcrystallites depended on sputtering conditions, and postannealing was not necessary to form microcrystallites in the silica-glass films. The average diameter varied from below 15 A to 62 A. In the optical absorption spectra, the absorption edge of the films clearly exhibited blue shift compared to each bulk semiconductor, and thus the quantum size effect could be found in these microcrystallites.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-10-20

著者

• Takiyama Ken

  Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University

• Osaka Yukio

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Nasu Hiroyuki

  Department Of Chemistry For Materials Faculty Of Engineering Mie University

• TSUNETOMO Keiji

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

• KITAYAMA Haruyuki

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

• Kawabuchi Akira

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Kitayama Haruyuki

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Higashi-Hiroshima, Saijo 724

• Nasu Hiroyuki

  Department of Industrial Chemistry, Faculty of Engineering, Mie University, Tsu, Kamihama 514

• Tsunetomo Keiji

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Higashi-Hiroshima, Saijo 724

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