Structural and Electronic Characterization of Discharge-Produced Boron Nitride
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概要
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Insulating BN thin-films were prepared at a temperature below 300℃ by the rf glow discharge decomposition of a B_2H_6 + NH_3 + H_2 gas mixture. The structure of the deposited films was amorphous and the optical bandgap was determined to be 〜 5.0 eV. Utilizing the plasma-deposited BN films, Al/BN/Si MIS structures were fabricated to test the dielectric properties. The static dielectric constant of stoichiometric BN is found to be 6.5, and the breakdown-field strength exceeds 3×10^6 V/cm.
- 社団法人応用物理学会の論文
- 1983-04-20
著者
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Osaka Yukio
Department Of Electrical Engineering Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Miyamoto Hironobu
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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