Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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Ueda M
Tokyo Inst. Technol. Tokyo Jpn
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Ueda M
Univ. Tokushima Tokushima Jpn
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Ueda M
The Institute Of Scientific And Industrial Research Osaka University
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UEDA Masato
Department of Applied Chemistry, Faculty of Engineering, Osaka Institute of Technology
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IMURA Takeshi
Department of Electrical Engineering, Osaka University
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CHAYAHARA Akiyoshi
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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NAKASHITA Toshio
Department of Electrical Engineering, Hiroshima University
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Imura T
Mitsubishi Paper Mills Ltd.
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Imura T
Department Of Electrical Engineering Hiroshima University
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Imura Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Nakashita Toshio
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Ph
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Nakashita Toshio
Department Of Applied Physics
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Ueda Masahiro
Department Of Techniques Faculty Of Education Fukui University
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Nakashita Toshio
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Physics Tokai University
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Imura Takeshi
Department of Chemistry, Faculty of Engineering Science, Osaka University
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