Imura T | Department Of Electrical Engineering Hiroshima University

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著作論文

Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
Microcrystallization in P-Doped Si:H Films at High Deposition Rate
Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
Evaluation of Boron and Phosphorus Doping Microcrystalline Silicon Films
Structure Change of Microcrystalline Silicon Films in Deposition Process
Growth of Hydrogenated Germanium Microcrystal by Reactive Sputtering
Chalcogenide Amorphous Semiconductor Diodes
Impurity Effects in Chalcogenide Amorphous Semiconductors by Low-Temperature Diffusion of Metal Ions
Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors
Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission Spectroscopy
Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
Reflectance spectra of BN Materials in the Vacuum Ultraviolet
Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
Formation of Polycrystalline SiC in ECR Plasma

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