Evaluation of Boron and Phosphorus Doping Microcrystalline Silicon Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-08-20
著者
-
HIRAKI Akio
Faculty of Engineering, Osaka University
-
Hiraki Akio
Faculty Of Engineering Osaka University
-
IMURA Takeshi
Faculty of Engineering, Osaka University
-
KAYA Hiroshi
Central Research Laboratory, TOA Nenryo Kogyo K.K.
-
KUSAO Takashi
Faculty of Engineering, Osaka University
-
NAKAMURA Osamu
Central Research Laboratory, TOA Nenryo Kogyo K.K.
-
OKAYASU Yoshinobu
Central Research Laboratory, TOA Nenryo Kogyo K.K.
-
MATSUMURA Mitsuo
Central Research Laboratory, TOA Nenryo Kogyo K.K.
-
Kusao Takashi
Faculty Of Engineering Osaka University
-
Okayasu Yoshinobu
Central Research Laboratory Toa Nenryo Kogyo K.k.
-
Hiraki A
Kochi Univ. Technol. Kochi‐ken Jpn
-
Kaya Hiroshi
Central Research Laboratory Toa Nenryo Co. Ltd.
-
Imura T
Mitsubishi Paper Mills Ltd.
-
Imura T
Department Of Electrical Engineering Hiroshima University
-
Imura Takeshi
Faculty Of Engineering Osaka University
-
Matsumura Mitsuo
Central Research Laboratory Toa Nenryo Kogyo K.k.
-
Nakamura Osamu
Central Research Laboratory Toa Nenryo Kogyo K.k.
関連論文
- Effects of Plasma Potential on Diamond Deposition at Low Pressure Using Magneto-Microwave Plasma Chemical Vapor Deposition
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition
- Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Blue and Green Cathodoluminescence of Synthesized Diamond Films Formed by Plasma-Assisted Chemical Vapour Deposition : Optical Properties of Condensed Matter
- Characterization of Diamond Particles and Films Formed by Plasma-Assisted Chemical Vapour Deposition Using High-Voltage Electron Microscopy
- Large Area Chemical Vapour Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma
- Effect of CO_2 Addition on Diamond Growth by DC Arc Plasma Jet Chemical Vapour Deposition
- Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar^+ Ion Bombardment
- Si(LMM) Auger Electron Emission from Si Alloys by keV Ar_+ Ion Bombardment, New Effect and Application
- Evaluation of Boron and Phosphorus Doping Microcrystalline Silicon Films
- Structure Change of Microcrystalline Silicon Films in Deposition Process
- Growth of Hydrogenated Germanium Microcrystal by Reactive Sputtering
- Auger and X-Ray Analyses of Iron-Oxide-Coated Si Photoelectrodes
- Fabrication of Chalcogenide Amorphous Semiconductor Diodes Using Low Temperature Thermal Diffusion Techniques
- Chalcogenide Amorphous Semiconductor Diodes
- Impurity Effects in Chalcogenide Amorphous Semiconductors by Low-Temperature Diffusion of Metal Ions
- Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors
- Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission Spectroscopy
- Normal Atmospheric Preparation of YBa_2Cu_4O_8 Superconductor from Nitrate Solution by Freeze-Drying Method
- High-Quality YBa_2Cu_3O_ Ceramics Prepared from Freeze-Dried Nitrates
- Superconducting YBa_2Cu_O_Particles Prepared from Freeze-Dried Nitrates
- Growth and Characterization of Homogeneous YBa_2Cu_3O_ Powders Prepared by a Freeze-Drying Method
- Growth and Characterization of Carbon Nanowalls(Special Issue on Field Electron Emission from Carbon Materials)
- Seeding Diamond Nanocrystals on Si Substrates for Deposition of Diamond Films(Special Issue on Field Electron Emission from Carbon Materials)
- Growth and Characterization of Diamond Films on SiO_2/Si Substrates
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
- Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
- DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
- Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
- Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
- Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
- Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
- Nuclear Magnetic Resonance Study of NaCl Crystal Containing Ca Impurities
- Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
- Formation of Polycrystalline SiC in ECR Plasma
- Experimental Determination of Diffusion and Formation Energies of Thermal Vacancies in Germanium
- Soft X-Ray Emission Spectra of B $K$ and Si $L_{2,3}$ in B–Si–Ge Alloys
- Soft X-Ray Emission Spectra of B $K$ and Si $L_{2,3}$ in B–Si–Ge Alloys