Experimental Determination of Diffusion and Formation Energies of Thermal Vacancies in Germanium

概要

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Intrinsic germanium semiconductor specimens with various dislocation densities were quenched from high temperatures to introduce vacancies, after purification by the surface oxidation technique. The contamination due to copper atoms diffused into these specimens was below 1x10^<13. atoms/c.c.. Annealing curves of exponential decay type were observed for specimens with dislocation densities (n_D〜5x10^3〜10^5). The activation energy for diffusion and diffusion are found to be: 1.2〜1.3eV and D_v(T)=2×exp(-1.2eV/kT)cm^2/sec.. After annealing of quenched-in vacancies, copper atoms were introduced into the specimens by diffusion procedures. By the analysis of predpitating manner of supersaturated copper atoms thus introduced, the formation energy of a vacancy is found to be 1.9eV. Considering the number of quenched-in vacancies obtained by the quenching experiments, the concentration of quencbed-in vacancies is concluded to be: N_V(T)=1.85×10^<23>exp(-1.9eV/kT)/c.c..
社団法人日本物理学会の論文
1966-01-05