Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-05-01
著者
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Hiraki A
Faculty Of Engineering University Of The Ryukyus
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Higa Akira
Faculty Of Engineering University Of The Ryukyus
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Toguchi M
Faculty Of Engineering University Of The Ryukyus
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Toguchi Minoru
Faculty Of Engineering University Of The Ryukyus
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MAEHAMA Takehiro
Faculty of Engineering, University of the Ryukyus
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HATTA Akimitsu
Faculty of Engineering, Osaka University
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ITO Toshimichi
Faculty of Engineering, Osaka University
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HIRAKI Akio
Faculty of Engineering, Osaka University
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Hiraki Akio
Faculty Of Engineering Osaka University
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Maehama Takehiro
Univ. Of The Ryukyus Okinawa Jpn
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Ito Toshimichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cooperative Research Ce
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Ito Toshimichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Maehama Takehiro
Faculty Of Engineering University Of The Ryukyus
関連論文
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Hydrogen Storage Phenomenon in Amorphous phase of Hydrogenated Carbon Nitride
- Raman Analysis of trans-Polyacetylene Chains in Hydrogenated Amorphous Carbon Films
- Improvement in γ-ray Detection Quality of Al/CdTe/Pt Schottky-Type Radiation Detector by Sulfur Treatment
- Analysis of Layer Structure Variation of Periodic Porous Silicon Multilayer
- Formation of Aluminum Schottky Contact on Plasma-Treated Cadmium Telluride Surface
- Preparation of Amorphous Hydrogenated Carbon Films by RF Sputtering at a Low-Hydrogen-Flow-Rate Region for Hydrogen-Reactive Substrates
- Formation of Surface Oxide Layer on CdTe and Reduction of Surface Leakage Current by Inductively Coupled O_2 Plasma Treatment
- Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition
- Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
- Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Blue and Green Cathodoluminescence of Synthesized Diamond Films Formed by Plasma-Assisted Chemical Vapour Deposition : Optical Properties of Condensed Matter
- Characterization of Diamond Particles and Films Formed by Plasma-Assisted Chemical Vapour Deposition Using High-Voltage Electron Microscopy
- Large Area Chemical Vapour Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma
- Effect of CO_2 Addition on Diamond Growth by DC Arc Plasma Jet Chemical Vapour Deposition
- Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar^+ Ion Bombardment
- Evaluation of Boron and Phosphorus Doping Microcrystalline Silicon Films
- Structure Change of Microcrystalline Silicon Films in Deposition Process
- Auger and X-Ray Analyses of Iron-Oxide-Coated Si Photoelectrodes
- Impurity Effects in Chalcogenide Amorphous Semiconductors by Low-Temperature Diffusion of Metal Ions
- Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors
- Normal Atmospheric Preparation of YBa_2Cu_4O_8 Superconductor from Nitrate Solution by Freeze-Drying Method
- High-Quality YBa_2Cu_3O_ Ceramics Prepared from Freeze-Dried Nitrates
- Superconducting YBa_2Cu_O_Particles Prepared from Freeze-Dried Nitrates
- Growth and Characterization of Homogeneous YBa_2Cu_3O_ Powders Prepared by a Freeze-Drying Method
- X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
- A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
- Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
- ELS Study of Amorphous Si(Substrate)-SiO_2(Film Overlayer) System with Varying Primary Electron Energy
- Electronic Energy States of Tungsten Dichalcogenides by Low Energy Electron Loss Spectroscopy Study
- Properties of Al Schottky contacts on CdTe(111)Cd surface treated by He and H2 plasmas
- Quantitative Analysis of Polarization Phenomena in CdTe Radiation Detectors
- Effect of He Plasma Treatment on the Rectification Properties of Al/CdTe Schottky Contacts
- Surface Modification of CdTe Crystal by Plasma Treatment Using Various Gases
- Growth and Characterization of Carbon Nanowalls(Special Issue on Field Electron Emission from Carbon Materials)
- Seeding Diamond Nanocrystals on Si Substrates for Deposition of Diamond Films(Special Issue on Field Electron Emission from Carbon Materials)
- Growth and Characterization of Diamond Films on SiO_2/Si Substrates
- Electron Microscopic Study on the Initial Stages of (111)-Oriented Diamonds Grown on Pt Substrates
- Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
- Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
- Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating
- Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
- Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner Surface : Surfaces, Interfaces and Films
- Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation
- Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
- Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition
- Configuration of Hydrogen in Sp^3-Rich Amorphous Hydrogenated Carbon Films Prepared by RF Magnetron Sputtering of Graphite
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- Fabrication of Diamond Films at Low Pressure and Low-Temperature by Magneto-Active Microwave Plasma Chermical Vapor Deposition ( Plasma Processing)
- Light Emission from Microcrystalline Si Confined in SiO_2 Matrix through Partial Oxidation of Anodized Porous Silicon
- Nitrogen Doping Effects on Electrical Properties of Diamond Films
- Structural Change of Crystalline Porous Silicon with Chemisorption
- Stuffing of Noble Metals into Anodized Porous Silicon by Direct Evaporation
- Nuclear Magnetic Resonance Study of NaCl Crystal Containing Ca Impurities
- Low Temperature Fabrication of Diamond Films with Nanocrystal Seeding
- Electric Field Breakdown of Lateral Schottky Diodes of Diamond
- Ohmic Contact Formation for N-Type Diamond by Selective Doping
- Chemical-Vapor-Deposited Diamond Overgrowth on Platinum Thin Films Deposited on Diamond Substrates
- High-Quality Homoepitaxial Diamond Films Grown at Normal Deposition Rates : Structure and Mechanical and Thermal Properties of Condensed Matter
- Luminescent Characteristics of Plasma-Oxidized Porous Silicon
- Visible Photoluminescence from Anodically Oxidized Porous Silicon
- Effect of Oxygen Component in Magneto-Active Microwave CH_4/He Plasma on Large-Area Diamond Nucleation over Si
- CVD growth and field emission characteristics of various types of nano-structured carbon films
- Highly Efficient Electron Emission Diode of Single-Crystalline Chemical-Vapor-Deposition Diamond
- Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
- Experimental Determination of Diffusion and Formation Energies of Thermal Vacancies in Germanium
- Hydrogen Storage Phenomenon in Amorphous Phase of Hydrogenated Carbon Nitride
- Surface Modification of CdTe Crystal by Plasma Treatment Using Various Gases
- Preparation of Amorphous Hydrogenated Carbon Films by RF Sputtering at a Low-Hydrogen-Flow-Rate Region for Hydrogen-Reactive Substrates
- Properties of Al Schottky Contacts on CdTe(111)Cd Surface Treated by He and H2 Plasmas
- Raman Analysis of trans-Polyacetylene Chains in Hydrogenated Amorphous Carbon Films
- Formation of Aluminum Schottky Contact on Plasma-Treated Cadmium Telluride Surface
- Quantitative Analysis of Polarization Phenomena in CdTe Radiation Detectors
- Effect of He Plasma Treatment on the Rectification Properties of Al/CdTe Schottky Contacts
- New CdTe Pixel Gamma-Ray Detector with Pixelated Al Schottky Anodes
- Improvement in $\gamma$-ray Detection Quality of Al/CdTe/Pt Schottky-Type Radiation Detector by Sulfur Treatment