Ohmic Contact Formation for N-Type Diamond by Selective Doping
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-08-01
著者
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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KOIZUMI Satoshi
Advanced Materials Laboratory, National Institute for Materials Science
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TERAJI Tokuyuki
Department of Electrical Engineering, Osaka University
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Koizumi Satoshi
Sensor Materials Center National Institute For Materials Science
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Kanda H
Advanced Materials Laboratory National Institute For Materials Science
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Koizumi S
Sensor Materials Center National Institute For Materials Science
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Teraji T
Sensor Materials Center National Institute For Materials Science
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Teraji Tokuyuki
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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KATAGIRI Masayuki
Advanced Materials Laboratory, National Institute for Materials Science
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KANDA Hisao
Advanced Materials Laboratory, National Institute for Materials Science
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Katagiri Masayuki
Advanced Materials Laboratory National Institute For Materials Science
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Koizumi Satoshi
Advanced Materials Laboratory National Institute For Materials Science
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