Highly Efficient Electron Emission Diode of Single-Crystalline Chemical-Vapor-Deposition Diamond
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概要
- 論文の詳細を見る
A novel type of flat electron emission diode with a high emission efficiency has been fabricated using single crystalline diamond thin films homoepitaxially grown on thick high-pressure-synthesized diamond. For the formation of the buried electrode, 180-keV N^+ ions were implanted into the homoepitaxial layer grown by microwave plasma chemical-vapor-deposition (CVD) method to a dose 1×10^<16> ions/cm^2 at room temperature. Since this process created a significant damage in the specimen surface layer working as the electron emission surface, a high quality diamond layer was subsequently overgrown to recover the damaged surface. Applying voltages of sub-kV between the hydrogenated surface and the buried electrode results in an efficient electron emission (>10%).
- 社団法人応用物理学会の論文
- 1998-09-15
著者
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HATTA Akimitsu
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Hatta Akimitsu
Department Of Electrical Engineering Osaka University:(present Address)department Of Electronic And
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NISHIMURA Masaki
Department of Electrical Engineering, Osaka University
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HATTA Akimitsu
Department of Electrical Engineering, Osaka University:Kochi University of Technology
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