Effect of Oxygen Component in Magneto-Active Microwave CH_4/He Plasma on Large-Area Diamond Nucleation over Si
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概要
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Nucleation-enhanced pretreatments have been studied for large-area diamond growth on Si (100) substrates using magneto-active microwave plasma chemical vapor deposition (CVD) at low pressures below 10 Pa. In this study, an optimal CO_2 composition in the CH_4/He plasma used for the pretreatment was mainly examined for the case of a low substrate temperature of 〜600℃. A two-hour subsequent growth using a CH_4 [5 sccm]/CO_2 [10 sccm/H_2 [85 sccm] gas mixture after the pretreatment resulted in <100>-oriented growth of diamond Particles with a high density (〜10^9/cm^2) out Si substrates pretreated at CO_2 concentrations of 1-2%. On the other hand, at CO_2 concentrations higher than these, the carbon films deposited during the pretreatment were less dense and were almost completely etched off after a 10-min treatment using the growth plasma. It was found that quadrupole mass spectra, optical omission spectra and Raman scattering spectra changed substantially when CO_2 beyond 3.8% was added to the source gas.
- 社団法人応用物理学会の論文
- 1999-07-30
著者
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HATTA Akimitsu
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Wang Chunlei
Department Of Physics Shandong University
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Wang Chunlei
Department Of Electrical Engineering Osaka University
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Wang Chunlei
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
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Hatta Akimitsu
Department Of Electrical Engineering Osaka University:(present Address)department Of Electronic And
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Jeon Hyeongmin
Department of Electrical Engineering, Osaka University
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Jeon Hyeongmin
Department Of Electrical Engineering Osaka University
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