Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
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概要
- 論文の詳細を見る
Low enerxv electron loss sr>ectroscorv (ELS) studv was r>erformed on IT -HfSe. (group IVB metal compound) and 2H-NbSe. (group VB metal compound)by using incident electron energies of 30-250 eV. From the loss data in the secondderivative form, maxima in density-of-states in the conduction band of the corn-pounds were deduced through the information on the filled core states sy x-rayphotoelectron spectroscopy. The conduction band of the transition-metal di-chalcogenides could be devided into two parts. The results are discussed in relationto the previous work on WS. (group VIB metal compound), and also to proposalsbased on band calculations and experimental studies on the transition-metaldichalcogenides with constituent metals of group IVB, VB and VIB.
- 社団法人日本物理学会の論文
- 1981-06-15
著者
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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IWAMI Motohiro
Department of Electrical Engineering, Osaka University
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Hiraki Akio
The University Of Electro-communications
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Iwami Motohiro
Department Of Electrical Engineering Osaka University
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Iwami Motohiro
Faculty Of Engineering Osaka University
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Iwami Motohiro
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Electrical Eng
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HORIIKE Akio
The University of Electro-Communications
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