Effect of Annealing on Photoluminescence Properties in Ar^+-Ion Irradiated MOCVD-Grown ZnSe Films : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-04-20
著者
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TAGUCHI Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University
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HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Sekoguchi Maki
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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