Biexciton Luminescence from GaN Epitaxial Layers

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-06-15

著者

• Nakamura Shuji

  Department Of Research And Development Nichia Chemical Industries Ltd.

• TAGUCHI Tsunemasa

  Department of Electrical and Electronic Engineering, Yamaguchi University

• Kobayashi Sota

  Silicon Systems Research Laboratories Nec Corporation

• TAGUCHI Takao

  SORTEC Corporation

• Okada K

  Yamaguchi Univ. Yamaguchi Jpn

• Taguchi T

  Research Laboratories Nippondenso Co. Ltd.

• Kobayashi S

  Science University Of Tokyo In Yamaguchi

• Kobayashi S

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology(aist)

• Yamada Y

  Akita Univ. Akita Jpn

• Yamada Yuh

  National Research Institute For Metals

• Sasaki Fumio

  Electrotechnical Laboratory

• Kobayashi Shunsuke

  Electrotechnical Laboratory

• TANI Toshiro

  Electrotechnical Laboratory, Tsukuba

• Tani Toshiro

  Electrochnical Laboratory

• OKADA Kiyohiko

  Department of Electrical and Electronic Engineering, Yamaguchi University

• YAMADA Yoihi

  Department of Electrical and Electronic Engineering, Yamaguchi University

• SHINOMIYA Gen-ichi

  Department of Research and Development, Nichia Chemical Industries, Ltd.

• YAMADA Yoichi

  Department of Electrical and Electronic Engineering, Yamaguchi University

• TAGUCHI Takao

  ASET Super-fine SR Lithography Laboratory

• Okada Kiyohiko

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Kobayashi Shunsuke

  Science University Of Tokyo

• Kobayashi Shunsuke

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology(aist)

• Kobayashi Shunsuke

  Liquid Crystal Institute Science University Of Tokyo In Yamaguchi

• Yamada Y

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Tani T

  Toyota Central R&d Labs. Inc.

• Sasaki F

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Taguchi T

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Taguchi Tsunemasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Shinomiya Gen-ichi

  Department Of Research And Development Nichia Chemical Industries Ltd.

• Nakamura Shuji

  Department Of Cardiovascular Medicine Hiroshima University Graduate School Of Biomedical Sciences

• Yamada Yoichi

  Department Of Cellular Physiology And Signal Transduction Sapporo Medical University School Of Medic

• Yamada Yoihi

  Department Of Electrical And Electronic Engineering Yamaguchi University

• NAKAMURA Shuji

  Department of Agricultural Chemistry, Faculty of Agriculture, The University of Tokyo

関連論文

• Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Constructing a Cactus for Minimum Cuts of a Graph in ★(mn+n^2logn) Time and ★(m) Space (Special Issue on Selected Papers from LA Symposium)
• Classification of Corkscrew Collaterals in Thromboangiitis Obliterans (Buerger's Disease) : Relationship Between Corkscrew Type and Prevalence of Ischemic Ulcers
• Relationship between Augmentation Index and Flow-Mediated Vasodilation in the Brachial Artery
• PE-503 Relationship between the Number of Circulating Endothelial Progenitor Cells and Medical History of Cardiovascular Diseases(Atherosclerosis, clinical(08)(IHD),Poster Session(English),The 72nd Annual Scientific Meeting of the Japanese Circulation Soc
• PE-160 Smoking Abolishes Ischemic Preconditioning-induced Augmentation of Endothelium-Dependent Vasodilation : Role of Endothelium-Derived Nitric Oxide and Endothelial Progenitor Cells(Atherosclerosis, clinical(05)(IHD),Poster Session(English),The 72nd An
• PE-118 Autologous Bone-Marrow Mesenchymal Stem Cell Implantation Induces Angiogenesis and Improves Endothelial Function in a Rabbit Ischemic Limb Model(Peripheral circulation/Vascular disease(03)(H),Poster Session(English),The 72nd Annual Scientific Meeti
• OJ-205 Aging and Hypertension Are Independent Risk Factors for Reduced Number of Circulating Endothelial Progenitor Cells(Hypertension, clinical(03)(H),Oral Presentation (Japanese),The 72nd Annual Scientific Meeting of the Japanese Circulation Society)
• OE-329 Periodontitis is Associated with Endothelial Dysfunction in Healthy Subjects as Well as Hypertensive Patients(Hypertension, clinical(02)(H),Oral Presentation(English),The 72nd Annual Scientific Meeting of the Japanese Circulation Society)
• PJ-718 The Effect of Selective Mineralocorticoid Receptor Blocker Eplerenone on Endothelial Function in Patients with Essential Hypertension(PJ121,Hypertension, Clinical 2 (H),Poster Session (Japanese),The 73rd Annual Scientific Meeting of The Japanese Ci
• PE-153 Activation of Rho Kinase (ROCK) Leads to Left Ventricular Diastolic Function in Patients with Essential Hypertension(PE026,Cardiac Function (Clinical) 1 (M),Poster Session (English),The 73rd Annual Scientific Meeting of The Japanese Circulation Soc
• OE-340 Rho Kinase Activity is Associated with Left Ventricular Hypertrophy in Hypertensive Patients(OE58,Hypertension, Clinical 2 (H),Oral Presentation (English),The 73rd Annual Scientific Meeting of The Japanese Circulation Society)
• Raman Scattering Studies of CuInS_2 Films Grown by RF Ion Plating
• Low-Temperature Deposition of CuIn(S_xSe_)_2 Thin Films by Ionized Cluster Beam Technique
• Fabrication of Dual-disks Microlasers in Thiophene/Phenylene Co-oligomers
• Alternative Interpretation of Impulse Response of Phonon-Polaritons
• Excitation of Phonon-Polaritons with Asymmetric Transient Grating
• 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
• High-Power Pure Blue InGaN Laser Diodes
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
• High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
• InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
• Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
• High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
• InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
• Cd-Doped InGaN Films Grown on GaN Films
• Si-Doped InGaN Films Grown on GaN Films
• P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
• Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
• Hole Compensation Mechanism of P-Type GaN Films
• Thermal Annealing Effects on P-Type Mg-Doped GaN Films
• High-Power GaN P-N Junction Blue-Light-Emitting Diodes
• Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
• Measurement of Flow-Mediated Vasodilation of the Brachial Artery : A Comparison of Measurements in the Seated and Supine Positions
• Pycnogenol^【○!R】, French Maritime Pine Bark Extract, Augments Endothelium-Dependent Vasodilation in Humans
• Biexciton Luminescence from GaN Epitaxial Layers
• Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
• Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
• Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
• Newly Developed Polymer-Stabilized Ferroelectric Liquid Crystals: Microsized Bistable Domains and Monostable V-Shaped Switching
• Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
• Highly Accurate Process Proximity Correction Based on Empirical Model for 0.18 μm Generation and Beyond
• Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication
• A Study of High Pretilt Angle Generation in Nematic Liquid Crystal (5CB) on Rubbed Polythiophene Surfaces with Alkyl Chain Lengths
• Effect of the Molecular Structure of Weakly Rubbed Organic Solvent Soluble Polyimides with Trifluoromethyl Moieties on Anchoring Strength of Liquid Crystals
• Anisotropic Dispersion Force Effects for Alignment of Liquid Crystals on Rubbed Polystyrene Surfaces
• Effect of the Polymer Tilt Angle for Generation of Pretilt Angle in Nematic Liquid Crystal on Rubbed Polyimide Surfaces
• Effects of Conjugation of Mesogenic Core of Nematic Liquid Crystals for Polar Anchoring Energy and Surface Order Parameter on Rubbed Polyimide Films
• Pretilt Angles of Liquid Crystal on Organic-Solvent-Soluble Polyimide Alignment Films
• Synthesis of a Novel Organic-Solvent-Soluble Polyimide and Its Application to Alignment Film for Liquid Crystal Displays
• Dependence of the Switching Current on the Pretilt Angle in the Surface-Induced Ferroelectric Phase of a Nematic Liquid Crystal
• Spectral Electroluminescence Mapping of a Blue InGaN Single Quantum Well Light-Emitting Diode
• Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
• High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
• Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
• Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
• Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
• Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
• Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
• Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
• Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
• Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
• Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
• Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
• Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
• Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
• Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
• Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
• Infrared Lattice Absorption in Wurtzite GaN
• Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
• Temperature and Composition Dependences on the Electrical Properties of As-grown ZnHgTe Crystals Grown by the Travelling Heater Method : Semiconductors and Semiconductor Devices
• Effect of Annealing on Photoluminescence Properties in Ar^+-Ion Irradiated MOCVD-Grown ZnSe Films : Semiconductors and Semiconductor Devices
• Preparation and Ion-Beam-Induced Luminescence of Thermal CVD Diamond
• Bound-Exciton and Edge-Emission Spectra Associated with Li and Na Acceptors in ZnSe
• Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
• High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
• Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
• High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
• Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
• PE-146 Six French Transradial Approach Percutaneous Coronary Intervention with Percu Surge for Stable Angina Pectoris (SIX SENSE)(Coronary Revascularization, PTCA/Stent/DCA/Rotablator/New Device 8 (IHD) : PE25)(Poster Session (English))
• OJ-144 Impact of Persistent ST-segment Elevation after Spontaneous Reperfusion in Patients with Anterior Acute Myocardial Infarction(Acute Myocardial Infarction, Clinical (Diagnosis/Treatment) 4 (IHD) : OJ17)(Oral Presentation (Japanese))
• 5 Temporal Trend of Treatment and Outcome of Acute Myocardial Infarction(Symposium 7 (SY7) (IHD) : Longterm Prognosis of Japanese Patients with Coronary Disease : Medical Therapy, PCI, Surgical Intervention)(Special Program)
• Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
• High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
• High-Purity CdTe Single Crystals Grown from Solutions
• Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
• Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
• Effect of Electron Irradiation on Edge Emission Spectra in CdTe
• Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
• Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note
• 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
• Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
• Long Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates

もっと見る 閉じる

スポンサーリンク