Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
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概要
- 論文の詳細を見る
We studied the effect of UV-light irradiation on annealing of as- grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450℃ by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.
- 社団法人応用物理学会の論文
- 1998-08-15
著者
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Nakamura Shuji
Department Of Research And Development Nichia Chemical Industries Ltd.
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Kamiura Yoichi
Faculty Of Engineering Okayama University
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YAMASHITA Yoshifumi
Faculty of Engineering, Okayama University
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Yamashita Yoshifumi
Faculty Of Engineering Okayama University
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Nakamura Shuji
Department Of Cardiovascular Medicine Hiroshima University Graduate School Of Biomedical Sciences
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NAKAMURA Shuji
Department of Agricultural Chemistry, Faculty of Agriculture, The University of Tokyo
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