Semipolar (20\bar{2}1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
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概要
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We have demonstrated the InGaN/GaN single-quantum-well (SQW) red light-emitting diodes (LEDs) grown on the free-standing GaN (20\bar{2}1) substrate with a forward voltage as low as 2.8 V at 20 mA. A low p-GaN growth temperature is required to prevent the structure deterioration during the p-GaN growth. The reduction of the forward voltage was observed as the emission wavelength increased in the (20\bar{2}1) SQW LEDs, which is attributed to its reversed polarization-related electric field compared to the conventional c-plane LEDs.
- 2013-08-25
著者
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Nakamura Shuji
Department Of Cardiovascular Medicine Hiroshima University Graduate School Of Biomedical Sciences
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DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Huang Chia-Yen
Department of Materials, University of California, Santa Barbara, CA 93106, U.S.A.
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Kawaguchi Yoshinobu
Department of Materials, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Yuh-Renn
Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
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Zhao Yuji
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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NAKAMURA Shuji
Department of Agricultural Chemistry, Faculty of Agriculture, The University of Tokyo
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