292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
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概要
- 論文の詳細を見る
We report the use of a novel transparent AlN base layer to achieve sub-300 nm electroluminescence from an AlGaN $p$-$n$ junction single quantum well light emitting diode grown on sapphire by metal organic chemical vapor deposition. For unpackaged devices tested on wafer at a continuous current of 120 mA, an optical power of 2.4 μW was achieved. Peak emission was 292 nm, with very little secondary wavelength emission.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-15
著者
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Nakamura Shuji
Department Of Research And Development Nichia Chemical Industries Ltd.
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Fini Paul
Department Of Matrials Science And Engineering University Of California
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Kaeding John
Department Of Matrials Science And Engineering University Of California
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Sharma Rajat
Department Of Matrials Science And Engineering University Of California
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Hanlon Amy
Department of Materials Science and Engineering, University of California, Santa Barbara, California
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Pattison P.
Department of Materials Science and Engineering, University of California, Santa Barbara, California
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Nakamura Shuji
Department Of Cardiovascular Medicine Hiroshima University Graduate School Of Biomedical Sciences
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Hanlon Amy
Department Of Matrials Science And Engineering University Of California
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Patfison P.
Department Of Matrials Science And Engineering University Of California
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Nakamura Shuji
Department Of Matrials Science And Engineering University Of California
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NAKAMURA Shuji
Department of Agricultural Chemistry, Faculty of Agriculture, The University of Tokyo
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