Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-09-15
著者
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Nakamura Shuji
Department Of Research And Development Nichia Chemical Industries Ltd.
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Sano M
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Mukai T
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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MUKAI Takashi
Department of Research and Development, Nichia Chemical Industries Ltd.
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Mukai Takashi
Kyoto Univ. Kyoto Jpn
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Takahashi Masayoshi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Mukai Takashi
Department Of Research And Development; Nichia Chemical Industries Ltd.
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SENOH Masayuki
Department of Research and Development, Nichia Chemical Industries, Ltd.
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Mukai Takashi
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Mukai Takashi
Nichia Corp. Tokushima Jpn
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Mukai Takashi
Department Of Nitride Semiconductor Research Laboratory Optoelectronics Products Division Nichia Cor
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Nakamura S
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsushita T
Department Of Research And Development Nichia Chemical Industries Ltd
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Nakamura Shuji
Department Of Cardiovascular Medicine Hiroshima University Graduate School Of Biomedical Sciences
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Masui Shingo
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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NAKAMURA Shuji
Department of Agricultural Chemistry, Faculty of Agriculture, The University of Tokyo
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