365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy

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Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
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Hole Compensation Mechanism of P-Type GaN Films
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
High-Power GaN P-N Junction Blue-Light-Emitting Diodes
Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
Study of GaN-based Laser Diodes in Near Ultraviolet Region(Semiconductors)
Wavelength Dependence of InGaN Laser Diode Characteristics
Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
Ultra-High Efficiency White Light Emitting Diodes
Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
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365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
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High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
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Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates (電子部品・材料)

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