Ultra-High Efficiency White Light Emitting Diodes

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関連論文

Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
High-Power Pure Blue InGaN Laser Diodes
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Si-Doped InGaN Films Grown on GaN Films
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
Hole Compensation Mechanism of P-Type GaN Films
High-Power GaN P-N Junction Blue-Light-Emitting Diodes
Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
Wavelength Dependence of InGaN Laser Diode Characteristics
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
Ultra-High Efficiency White Light Emitting Diodes
Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
Ultraviolet GaN Single Quantum Well Laser Diodes
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
Ultra-High Efficiency White Light Emitting Diodes
Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
Dislocation Reduction Mechanism in Low-Nucleation-Density GaN Growth Using AlN Templates
Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
Wavelength Dependence of InGaN Laser Diode Characteristics
Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

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