Wavelength Dependence of InGaN Laser Diode Characteristics

概要

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InGaN multi-quantum-well-structure laser diodes (LDs) with an emission wavelength of longer than 420 nm were grown on both an epitaxially laterally overgrown GaN (ELOG) substrate and an ELOG on a free-standing GaN substrate by a metaorganic chemical vapor deposition method. The wavelength dependence of InGaN LD characteristics was investigated. It was found that there was a strong relationship between the threshold current density and the emission wavelength of LDs. The LDs with the emission wavelength of 450 nm grown on the ELOG on a free-standing GaN substrate were demonstrated. The threshold current density and voltage of these LDs were 2.8 kA/cm2 and 4.5 V, respectively. The estimated lifetime was approximately 5000 h under 50°C continuous-wave operation at an output power of 5 mW.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2001-05-15